P. Guérin
University of Poitiers
36 Papers
376 Citations
P. Guérin is an academic researcher from University of Poitiers. The author has contributed to research in topics: Thin film & Sputter deposition. The author has an hindex of 17, co-authored 36 publications.
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Papers
Interdependence between stress, preferred orientation, and surface morphology of nanocrystalline TiN thin films deposited by dual ion beam sputtering
TL;DR: In this article, the authors investigated the evolution with the thickness of the texture, surface morphology, and residual stress in TiN thin films deposited by dual ion beam sputtering, and found that the change in the preferred orientation from (002) to (111) is not correlated with a strain energy minimization or with a systematic increase in surface roughness.
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In situ stress evolution during magnetron sputtering of transition metal nitride thin films
Gregory Abadias,P. Guérin +1 more
TL;DR: In this article, the authors studied the stress evolution during reactive magnetron sputtering of TiN, ZrN, and TiZrN layers using real-time wafer curvature measurements.
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Zirconium nitrides deposited by dual ion beam sputtering: physical properties and growth modelling
TL;DR: In this article, the influence of different elaboration parameters (ion energy, gas composition of the reactive beam and substrate temperature) on the nitrides composition and on their optical and electrical properties was particularly studied.
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Stress evolution in magnetron sputtered Ti–Zr–N and Ti–Ta–N films studied by in situ wafer curvature: Role of energetic particles
TL;DR: In this paper, the authors studied the stress evolution during reactive magnetron sputtering of binary TiN, ZrN and TaN thin films as well as ternary Ti-Zr-N and Ti-Ta-N solid solutions using real-time wafer curvature measurements.
56
Y2O3 thin films: internal stress and microstructure
TL;DR: In this article, the ion beam deposition process promotes a strong disorder on the oxygen network and the crystallographic symmetry of the Y2O3 structure which is Th7 becomes a fluorite related symmetry which is Fm3m Annealing treatments or deposition involving a secondary ion beam assisted deposition process reorders the Fm 3m structure which comes back to the equilibrium Th7 symmetry.
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