We have observed a long-lived residual photoconductivity in low-temperature-grown (LT) InGaAs. These results have significant consequences for devices comprised of LT-InGaAs, other defect moderated materials, and standard-temperature-grown InGaAs. Our investigation utilizes time-resolved terahertz conductivity to quantify the trapping and recombination rates of LT Be-doped In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells and bulk InGaAs. It is found that Be doping reduces the residual photoconductivity and increases the initial electron trapping rate. These results are in contrast to those observed via transient absorption studies, which suggest that these systems have returned to equilibrium after the initial transient. Furthermore, a 600 °C anneal increases both the trapping and recombination rate in all Be-doped samples.

Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells

Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 μm wavelength

The ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals is investigated using the variable stripe length geometry with 200 femtosecond pump pulses. We find that the luminescence lifetimes are in the nanosecond range throughout the entire spectral range. However, no evidence for optical gain is observed even when the pump fluence is in excess of 40mJ∕cm2. A comparison with similarly prepared, oxide-passivated silicon nanocrystals suggests that oxide passivation plays an important role in providing optical gain from silicon nanocrystals.

/pdf/ultrafast-photoluminescence-dynamics-of-nitride-passivated-a07vhhcfav.pdf

Ultrafast photoluminescence dynamics of nitride-passivated silicon nanocrystals using the variable stripe length technique

A summary of ultrafast In0.53Ga0.47As photoconductors at λ = 1.55 µm is provided, with emphasis placed on recent ion-implanted and ErAs-nanoparticulate materials that have displayed response times <1 ps. Signal-processing techniques are then developed to deconvolve the photocarrier lifetime from pump–probe photo-transmission data. These techniques are formulated in a way that allows the estimation of photocarrier lifetime values less than the pump–probe laser pulse width, and are applied to the fastest ErAs:In0.53Ga0.47As material measured to date with a photocarrier lifetime of ≈0.3 ps.

https://iopscience.iop.org/article/10.1088/0268-1242/20/7/009/pdf

State-of-the-art in 1.55 µm ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime

In this article, we present the investigation of bias-dependent carrier dynamics of ErAs:In(Al)GaAs superlattice (SL) photoconductors and compare the results to a theoretical model. The carrier dynamics for materials without InAlAs layer can be modeled by a monoexponential decay that features a linear decrease in the carrier lifetime with bias. For a 10 mW laser power, the bias-free lifetime for this material is 440 fs and decreases to 97 fs at 72 kV/cm. For materials consisting of an SL with an absorbing InGaAs and a high-barrier InAlAs layer, the carrier lifetime determined by differential transmission features a bias-dependent fast decay ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula> 100 fs) followed by a bias-independent slower decay ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula> 2.5 ps). The share of charges being trapped with the fast decay can go up to 83% at 80 kV/cm. Terahertz (THz) spectra for different biasing conditions were recorded in order to confirm the decrease of carrier lifetime. The reduction of the lifetime shifts the lifetime rolloff toward higher frequencies. The data show a maximum of 6 dB improvement in power for the high-frequency components, in agreement with theoretical expectations. The optimized time domain spectroscopy spectrum shows a peak dynamic range of 110 dB with more than 6 THz bandwidth. The maximum emitted THz power outcoupled through an uncoated silicon-lens with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\sim$</tex-math></inline-formula> 30% reflection loss was 472 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\pm$</tex-math></inline-formula> 35 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula> W. 

Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors

A femtosecond, tunable color center laser was used to conduct degenerate pump-probe transmission spectroscopy of thin film low temperature grown molecular beam epitaxy In0.53Ga0.47As samples. Low temperature molecular beam epitaxy In0.53Ga0.47As exhibits a growth-temperature dependent femtosecond optical response when probed near the conduction band edge. Below Tg=250°C, the optical response time of the material is subpicosecond in duration, and we observed induced absorption, which we suggest is due to the formation of a quasi-“three-level system”.

Femtosecond optical response of low temperature grown In 0.53 Ga 0.47 As

Femtosecond Optical Response of Low Temperature Grown In.53Ga.47As

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Femtosecond optical response of low temperature grown In 0.53 Ga 0.47 As

Femtosecond Optical Response of Low Temperature Grown In.53Ga.47As