Electronic transport calculations were carried out for Bi1−xSbx nanowires (0⩽x⩽0.30) of diameters 10 nm⩽dW⩽100 nm at 77 K. A band structure phase diagram was generated, showing the dependence of the relative band edge positions on diameter and composition. Calculations of the thermoelectric figure-of-merit (ZT) predict that the performance of Bi1−xSbx nanowires is superior to that of Bi nanowires and to that of the bulk alloy. An exceptionally high value of ZT for p-type nanowires at 77 K was found for dW∼40 nm and x∼0.13, which is explained by the coalescence in energy of up to ten valence subband edges to maximize the density-of-states at the Fermi energy.

Anomalously high thermoelectric figure of merit in Bi1−xSbx nanowires by carrier pocket alignment

One-dimensional (1D) nanostructures are ideal systems for investigating the dependence of electrical transport, optical properties and mechanical properties on size and dimensionality. They are expected to play an important role as both interconnects and functional components in the fabrication of nanoscale electronic and optoelectronic devices. This article presents an overview of current research activities that center on nanowires whose lateral dimensions fall anywhere in the range of 1–200 nm. It is organized into three parts: The first part discusses various methods that have been developed for generating nanowires with tightly controlled dimensions, orientations, and well-defined properties. The second part highlights a number of strategies that are being developed for the hierarchical assembly of nanowire building blocks. The third part surveys some of the novel physical properties (e.g., optical, electrical, and mechanical) of these nanostructures. Finally, we conclude with some personal perspecti...

Inorganic Semiconductor Nanowires

We present measurements of Shubnikov–de Haas oscillations in arrays of bismuth nanowires. For 80 nm wires, the hole concentration is less than 30% that of bulk Bi, a finding that is consistent with current models of quantum confinement effects. However, 30-nm-diam nanowires which are predicted to be semiconductors show a nearly isotropic short period of 0.025 T−1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30 nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.

Confinement effects and surface-induced charge carriers in Bi quantum wires

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires nanowires which are predicted to be a semiconducting show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.

Confinement effects and surface-induced charge carriers in Bi Quantum Wires

During the past 20 years, the thermoelectric properties of nanostructures such as one-dimensional bismuth (Bi) platforms have prompted the development of a wide variety of nanowire growth methods, aiming to achieve higher energy-conversion efficiency. Most of these methods have demonstrated single-crystal nanowire growth of a quality unmatched in bulk Bi. However, in contrast to the theoretical expectation that Bi nanowires should exhibit high thermoelectric performance, their observed thermoelectric properties have prevented their technological exploitation. Here, we review the current progress in the thermoelectrics of bismuth nanowires, the fundamentals of their advantage and limitation over bulk Bi, and their potential use for enhancing the thermoelectric performance.

Bismuth nanowire thermoelectrics

The small effective mass and high mobility of electrons in Bi, make Bi nanowires a promising system for thermoelectric applications. Dense arrays of 20-200 nm diameter Bi nanowires were fabricated by high pressure injection of the melt. Transport properties and Seebeck coefficient were investigated for Bi nanowires with various wire diameters as a function of temperature (1 K < T < 300 K) and magnetic fields (B < 0.6 T). We discuss the problem of the contact resistance of Bi nanowire arrays.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400122316

Thermopower of Bi Nanowire Array Composites

We fabricated Bi nanowire array composites with wire diameters from 30 to 200 nm by high-pressure injection (HPI) of Bi melt into porous anodic alumina templates. The composites were dense, with Bi volume fraction in excess of 50%. The parallel Bi nanowires, whose length appeared to be limited only by the thickness of the host template (up to 55 μm), terminated at both sides of the composite in the Bi bulk. The individual Bi nanowire crystal structure was rhombohedral, with the same lattice parameters as that of bulk Bi; the wires in the array were predominantly oriented with the trigonal axis along the wire length. Low contact resistance was achieved by bonding the composite to copper electrodes.

https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S0884291400056028

Processing and Characterization of High-conductance Bismuth Wire Array Composites

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Thermopower of Bi Nanowire Array Composites

Processing and Characterization of High-conductance Bismuth Wire Array Composites