P. Calvani
Roma Tre University
6 Papers
14 Citations
P. Calvani is an academic researcher from Roma Tre University. The author has contributed to research in topics: Diamond & Field-effect transistor. The author has an hindex of 3, co-authored 6 publications.
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Papers
Modeling of diamond field-effect transistors for RF IC development
B Pasciuto,Walter Ciccognani,Ernesto Limiti,Antonio Serino,P. Calvani,A. Corsaro,Gennaro Conte,Maria Cristina Rossi +7 more
TL;DR: In this paper, an equivalent circuit model for metal-semiconductor field effect transistors based on H-terminated polycrystalline diamond was developed and analyzed. But this model is not applicable to the case of RF ICs.
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Microwave operation of sub-Micrometer gate surface channel MESFETs in polycrystalline diamond
P. Calvani,A. Corsaro,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,E. Giovine,Walter Ciccognani,Ernesto Limiti +7 more
TL;DR: In this paper, a submicron gate-length metal semiconductor field effect transistors (MESFETs) were fabricated on hydrogen-terminated large grain polycrystalline diamond.
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RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond
Maria Cristina Rossi,P. Calvani,Gennaro Conte,Vittorio Camarchia,Federica Cappelluti,Giovanni Ghione,Walter Ciccognani,B Pasciuto,Ernesto Limiti,D. Dominijanni,E. Giovine +10 more
- 01 Dec 2009
TL;DR: In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development of microwave power devices.
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Microwave operation of sub-micrometer gate surface channel MESFETs in polycystalline diamond
P. Calvani,A. Corsaro,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,E. Giovine,Ernesto Limiti +6 more
- 16 Mar 2009
TL;DR: In this paper, a metal-Semiconductor field effect transistor (MESFET) was fabricated on hydrogen-terminated polycrystalline diamond, with high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency f T = 10 GHz and a maximum oscillation frequency f MAX, up to 35 GHz.
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Microwave performance of surface channel diamond MESFETs
P. Calvani,A. Corsaro,F. Sinisi,Maria Cristina Rossi,Gennaro Conte,S. Carta,Ernesto Limiti +6 more
- 02 Jun 2009
TL;DR: In this article, a sub-micron gate length MESFET was realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science.
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