http://antonirogalski.com/wp-content/uploads/2011/12/Infrared-detectors-Status-and-trends.pdf

Infrared detectors: status and trends

PULSE GENERATION AND DETECTION: Semiconductor Switching: The Time Evolution of Photonic Crystal Bandgaps (K. Agi et al.). General: Ultrawideband Pulser Technology (D.M. Parkes). ANTENNAS: Impulse Radiating Antennas: Transient Fields of Rectangular Aperture Antennas (S.P. Sulkin). Reflector Impulse Radiating Antennas: Temporal and Spectral Radiation on Boresight of a Reflector Type of Impulse Radiating Antenna (IRA) (D.V. Giri, C.E. Baum). Lens Impulse Radiating Antennas and TEM Horns: Design of the Low-Frequency Compensation of an Extreme-Bandwidth TEM Horn and Lens IRA (M.H. Vogel). Arrays: Transient Arrays (C.E> Baum). General: Some Basic Properties of Antennas Associated with Ultra-wideband Radiation (S.N. Samaddar, E.L. Mokole). PULSE PROPOGATION AND GUIDEANCE: Transient Dielectric Coefficient and Conductance in Dielectric Media in Nonstationary Fields (A. Gutman). SCATTERING THEORY, COMPUTATION, AND MEASUREMENTS: Early Time Signature Analysis of Dielectric Targets Using UWB Radar (S. Cloude et al.). SIGNAL PROCESSING: Time-Frequency Analysis: Feature Extraction from Electromagnetic Backscattered Data Using Joint Time-Frequency Processing (L.C. Trintinalia, H. Ling). Spectral Techniques: The E-Pulse Technique for Dispersive Scatterers (S. Primak et al.). Probabilistic Considerations: Robust Target Identification Using a Generalized Likelihood Ratio Test (J.E. Mooney et al.). General: Error Correction in Transient Electromagnetic Field Measurements Using Deconvolution Techniques (J-Z. Bao et al.). BROADBAND ELECTRONIC SYSTEMS AND COMPONENTS: Systems and Components: Ultra-wideband Sources and Antennas: Present Technology, Future Challenges (W.D. Prather et al.). Ultra-Wideband Radars: Dense Media Penetrating Radar (K. Min, M. Willis, Jr.). Polarimetric Ultra-wideband Radars: Polarimetry in Ultra-wideband Interferometric SEnsing and Imaging (W-M. Boerner, J.S. Verdi). BURIED TARGETS: Analytic Methods for Pulsed Signal Interaction with Layered, Lossy Soil Environments and Buried Objects (L.B. Felsen). 41 additional articles. Index.

/pdf/ultra-wideband-short-pulse-electromagnetics-2-1ljj2j04ig.pdf

Ultra-wideband, short-pulse electromagnetics 2

The characteristics of infrared (IR) microbolometer arrays utilizing semiconducting YBaCuO and operating at room temperature are presented. Surface-micromachined structures in the form of 1/spl times/10 arrays of pixel size 40 /spl mu/m/spl times/40 /spl mu/m and 60 /spl mu/m/spl times/60 /spl mu/m as well as single pixels of various geometries were constructed. Using the chopped radiation from a broad-band IR source, the responsivity R/sub V/ of the sensor was measured to be as high as 10/sup 4/ V/W and detectivity D* to be /spl sim/2/spl times/10/sup 7/ cm Hz/sup 1/2//W for a thermal conductance G/spl sim/10/sup -5/ W/K between the detector and the substrate. The spectral response was found to be uniform over a range of 1-12 /spl mu/m. Silicon micromachining and ambient-temperature processing were employed to ensure compatibility and, therefore, potential integration with CMOS-based signal processing circuitry. Methods of enhancing the figures of merit are discussed.

A semiconductor YBaCuO microbolometer for room temperature IR imaging

We explore the application of the semiconducting phases of YBaCuO thin films as a bolometer for uncooled infrared detection. For this study, four different structures were built with different types of buffer layers: YBaCuO on a Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer. These films were all amorphous without a detectable long range order. For comparison, crystalline tetragonal YBa 2 Cu 3 O 6.5 and YBa 2 Cu 3 O 6.3 thin films on a LaAlO 3 substrate were included into the study. All six films exhibited semiconducting resistance versus temperature characteristics. The bolometer figures of merit, responsivity, and detectivity were calculated from the measured temperature coefficient of resistance ~TCR! and the inherent noise characteristics of the temperature sensing element. The room temperature TCRs for all four amorphous films were greater than 2.5% K 21 . The highest TCR of 4.02% K 21 was observed on the amorphous YBaCuO thin film deposited on MgO/Si without a SiO2 layer. The TCR of the tetragonal films, on the other hand, remained 2% K 21 or less in the same temperature range. Noise measurements performed in the 1‐100 Hz frequency range revealed a quadratic dependence on the bias current as would be expected from ohmic electrical characteristics. The Johnson and 1/f regions were clearly identified in the noise spectrum. From TCR and noise measurements, we estimated the amorphous semiconducting YBaCuO bolometers would have a responsivity as high as 3.8310 5 V/W and a detectivity as high as 1.6310 9 cm Hz 1/2 /W for 1 mA bias current and frame frequency of 30 Hz if integrated with a typical air-gap thermal isolation structure. © 1996 American Institute of Physics.@S0021-8979~96!02924-6#

Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer

A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 /spl mu/m/spl times/50 /spl mu/m) This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92% From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5/spl times/10/sup 8/ cm/spl radic/Hz/W

/pdf/a-high-fill-factor-infrared-bolometer-using-micromachined-24h1ie8stn.pdf

A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

We have fabricated and measured the performance of semiconducting YBaCuO thin‐film thermometers on silicon for uncooled bolometric applications. Our YBaCuO thermometers have revealed a change in resistance with respect to temperature (dR/dT) as high as 8.2×103 Ω/K at T=294 K and the temperature coefficient of resistance as high as 3.1% K−1 over a 60 K range around room temperature which implies an excellent bolometric response. At 294 K the thermometers had a noise voltage of 0.75 μV/Hz1/2 at the frequency of 30 Hz and the bias current of 1 μA. Using the data above, we calculated that semiconducting YBaCuO bolometers would have a responsivity of 5.5×104 V/W and a detectivity D* as high as 1.3×108 cm Hz1/2/W for 1 μA bias current if integrated with a typical thermal isolation structure.

Semiconducting YBaCuO thin films for uncooled infrared bolometers

We have explored the charge transport mechanisms in six different YBaCuO semiconducting thin films in the temperature range of 70 K to room temperature Two of the samples were deposited on LaAlO 3 substrate and were tetragonal with the composition of YBa 2 Cu 3 O 65 and YBa 2 Cu 3 O 63  The other four were amorphous as-deposited on Si substrate with and without a MgO buffer layer, and on an oxidized Si substrate with and without a MgO buffer layer All tested films exhibited semiconductor-type resistance vs temperature characteristics with increasing resistance as the temperature was decreased Around room temperature all six samples had thermally activated transport characteristics that was interpreted as activation of hole-like carriers from localized states around the Fermi level to extended states As the temperature was decreased, two tetragonal samples went through a transition to a variable range hopping-like conduction The amorphous ones remained within the thermally-activated transport regime in the temperature range of 253 K to 318 K, with E A ≈ 02 eV

Charge transport in amorphous and tetragonal semiconducting YBaCuO films

We report Hall effect measurements on three different types of YBa2Cu3O7−δ samples. Two of them were well‐oxygenated superconducting films while one of them was an oxygen‐depleted semiconducting film. One of the superconducting samples was c‐axis oriented while the other had a mixture of c‐ and off‐c‐axis orientations as evident from resistivity and Raman spectroscopy analysis. According to Anderson, cuprate superconductors in normal state have separate spin and charge excitations called spinons and holons, respectively. The spinon bandwidth Ws defines the energy scale that determines the temperature dependence of the Hall coefficient. It was found that, for the same experimental conditions, Ws decreased for the sample with an off‐c‐axis growth compared to the perfectly c‐axis oriented sample. The cotangent of Hall angle θH showed a reasonably good quadratic dependence on temperature for both superconducting samples in normal state. In contrast, the semiconducting film, due to an inadequate stoichiometry ...

Studies and implications of the Hall effect in superconducting and semiconducting YBa2Cu3O7−δ thin films

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Investigation of semiconducting YBaCuO thin films: A new room temperature bolometer

Semiconducting YBaCuO thin films for uncooled infrared bolometers

Charge transport in amorphous and tetragonal semiconducting YBaCuO films

Studies and implications of the Hall effect in superconducting and semiconducting YBa2Cu3O7−δ thin films