Electrochemical oxidation of ZrB2 and MoSi2 refractory compounds as well ZrB2–MoSi2 ceramics in a 3% NaCl solution is studied using the method of polarization curves, quantitative AES, and SEM. It is established that the highest corrosion resistance is observed in the case of composites with a small amount (~5–10 wt.%) of MoSi2 due to their stable passivation at comparatively low anodic potentials. It is shown that the corrosion rate of a molten ZrB2 sample is 90% lower than that of a hot-pressed one.

Electrochemical oxidation of ZrB2–MoSi2 ceramics in a 3% NaCl solution

The radiation and thermal stability of the Schottky-barrier structures deposited by the magnetron sputtering of zirconium diboride onto the (0001) face of the Lely-grown n-6H(15R)SiC single crystals with the uncompensated-donor concentration of ∼1018 cm−3 was investigated by the methods of the I–V and C–V characteristics combined with the layer-by-layer Auger analysis. It is shown that the use of quasi-amorphous ZrB2 films when manufacturing contacts on n-6H(15R)SiC leads to no changes in the Schottky-barrier characteristics during rapid thermal annealing to 800°C in the range of 60Co γ-ray irradiation doses of 103–107 Gy.

Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB2 films

We investigated thermal stability of Au–TiBx (ZrBx) barrier contacts, as well as ohmic contacts with a TiBx diffusion barrier to n-Si (GaAs, InP, GaP, GaN, SiC). The electrophysical measurements of Schottky barrier diodes and ohmic contacts were performed both before and after rapid thermal annealing (RTA) up to 600 °С for the structures on Si, GaAs, InP and GaP, as well as up to higher temperatures for GaN (~900 °C) and SiC (~1000 °C). The concentration depth profiles of contact components were taken using Auger electron spectrometry, while phase composition and surface morphology of the metallization layers on test structures were determined using x-ray diffraction and atomic force microscopy. It was shown that the silicon, indium phosphide, gallium phosphide and gallium arsenide contact structures retained their properties and layer structure after RTA up to 600 °С. Contact degradation occurred at a temperature of 800 °С. The structures based on SiC (GaN) remained stable at temperatures up to 1000 °С (900 °С).

/pdf/heat-resistant-barrier-and-ohmic-contacts-based-on-tibx-and-ahmcbg6jj1.pdf

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures

Electrical and structural properties of Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers on n-6H-, 15Rand 4H-SiC (with epi-layer) were studied. High thermal stability of ideality factors and barrier heights in the formed contacts was explained by the thermal stability of an interface TiBx(ZrBx)-SiC after rapid thermal annealing at 800°Ñ for 60 s.

/pdf/sic-schottky-barrier-diodes-formed-with-tibx-and-zrbx-5bpwnendm0.pdf

SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers

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SiC Schottky-barrier diodes formed with TiBx and ZrBx amorphous layers