Okhyun Nam
Korea Polytechnic University
194 Papers
2.3K Citations
Okhyun Nam is an academic researcher from Korea Polytechnic University. The author has contributed to research in topics: Epitaxy & Layer (electronics). The author has an hindex of 35, co-authored 186 publications. Previous affiliations of Okhyun Nam include Samsung & North Carolina State University.
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Papers
Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC
TL;DR: It was confirmed that the edge dislocation density of the GaN buffer layer was related to the 2DEG mobility and sheet carrier density in the AlGaN/GaN HEMT.
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Micro-photoluminescence study of InxGa1-xN/GaN quantum wells
TL;DR: In this paper, a green In x Ga 1− x N/GaN single quantum well at room temperature was observed to be weaker for lower excitation density, but stronger for higher excitation densities.
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Growth mechanism of InGaN nanodots on three‐dimensional GaN structures
TL;DR: In this paper, the growth mechanism of indium gallium nitride (InGaN) nanodots and an InGaN layer, which were simultaneously formed on a three-dimensional (3D) GaN structure, having (0001) polar, ( 11-22) semi-polar, and (11-20) nonpolar facets, was investigated.
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Micro-crack-free high power blue-violet GaN-based laser diodes grown on maskless epitaxial lateral overgrown GaN/sapphire
Sung-Nam Lee,Ho-Sun Paek,Han-Youl Ryu,Joong-Kon Son,T. Sakong,T. Jang,K. K. Choi,Y.J. Sung,Yong-Chun Kim,Han-Ki Kim,Su-hee Chae,Kyoung-ho Ha,J. H. Chae,Kyung-Seop Kim,Joon Seop Kwak,Okhyun Nam,Yu-Sun Park +16 more
TL;DR: In this article, two types of cracks with the direction of 〈1.1.2.0.0'' were observed in the GaN-based laser diodes (LDs) structures grown on maskless ELO-GaN/sapphire substrates.
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Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells
TL;DR: In this paper , the structural and luminescence characteristics of the two facets were investigated using transmission electron microscopy equipped with cathodoluminescence, and the well-defined quantum wells, parallel and slanted to the growth plane, showed distinct differences in indium incorporation from both the X-ray yield and the contrast difference in annular darkfield images.