Point-contact of metal-semiconductor is widely used as a microwave (MW) power detector or harmonic mixer.However, at high frequencies, the application of such contact is problematic due to small size of the waveguide.

New microwave detector

Experimental studies of novel design microwave sensors based on selectively doped semiconductor structure of asymmetrical shape revealed that the gated bow-tie diodes are proper candidates for detection of electromagnetic radiation in millimeter wave range. Location of the gate over the active layer of the diode influences its electrical and detection properties as well as polarity of the detected voltage. Addition of the gate makes the asymmetry of the bow-tie diode’s I-V characteristic more pronounced, what in turn results in higher voltage sensitivity value. If the gate is located by the wide contact, the sensitivity raises by one order of magnitude. When the gate is located at the narrow contact, the voltage sensitivity increases almost by two orders of magnitude in respect to the ungated diode.

Gated Bow-Tie Diode With Selectively Doped 2DEG Active Layer for Microwave Sensing

Design of unsophisticated cost-effective planar asymmetric microwave diode is proposed Simplified technological process and use of simplex semiconductor material result in reduction of both time and cost of fabrication of the microwave diode Two types of the microwave diodes were produced during the same technological run: one demonstrating ohmic features, and the other having Schottky junction-like characteristics The Schottky-like diodes exhibited higher sensitivity and higher operational speed, while the ohmic ones had wider dynamic range suitable for microwave power measurements

Pulsed microwave sensor on heavily doped semiconductor substrate

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Pulsed microwave sensor on heavily doped semiconductor substrate