The main direction in the development of modern microelectronics is the improvement characteristics of electronic element base in the condition of the high temperature. The method of periodically doped channel is regarded as an application for transistor structures based on organic semiconductors. The possibility of channel conductivity modulation in CMOS transistors, however, is of high interest for high temperature detectors for industrial applications. Using the device-technological systems the models of PDCFETs (Periodically Doped Channel Field-Effect Transistors) and their characteristics have been constructed and simulated in the process of high thermal conditions.

PDCFET models for high-temperature detectors

Разработана и исследована референсная модель для анализа SGMOS (split gate MOS) транзисторов. Показано, что применение расщепленного затвора вполне эффективно в модуляционно-легированных структурах класса PDCFET. Снижение крутизны, быстродействия и изменение ВАХ транзисторных структур не носит катастрофический характер вплоть до температур – °C. Ключевые слова: периодически легированный канал; расщепленный затвор; МДП транзисторные структуры. The research of the reference model for impact ionization eff ects in SGMOS (split gate MOS) is presented. It is shown that the use of the split gate model of modulation-doped structures as PDCFET is quite eff ective for studies of impact ionization eff ects. Decrease in the steepness, speed, and change in the I–V characteristics of transistor structures is not catastrophic up to temperatures of – °C.

/pdf/multigate-mosfet-model-with-a-quantum-dot-in-the-channel-440ewfm5sl.pdf

Multigate Mosfet Model With a Quantum Dot in the Channel

The method of periodically doped channel was originally regarded as an application for transistor structures based on organic semiconductors. The possibility of channel conductivity modulation in CMOS transistors, however, is of high interest for high temperature electronics. To provide high conductivity of the nanoregions that reduce the overall effective length of the channel due to the geometric factor a the dope density in them must be high. However, the lateral drift of dope may result in closing of the doped nanoregions and in degradation of the subthreshold characteristics of the transistor. To handle this, as a dope additive (for the N channel of the MOS transistor), it is reasonable to use arsenic with its subsequent activation by rapid thermal annealing (RTA). Using programs for process simulation, we construct the device-technological model of a periodically doped channel field-effect transistor (PDCFET). This model allows one to solve the problem of technological implementation and characterization of the transitions manufactured in a 0.18–0.5 μm process with gate regions based on nanomasks which operate under extreme thermal conditions.

Analysis of characteristics for periodically doped channel field-effect transistors under extreme thermal conditions

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Analysis of characteristics for periodically doped channel field-effect transistors under extreme thermal conditions