Coaxial waveguide microstructures are provided. The microstructures include a substrate (2) and a coaxial waveguide disposed about the substrate. The coaxial waveguide includes: a center conductor (20); an outer conductor including one or more walls (4, 10, 18, 24, 28), spaced apart from and disposed around the center conductor; one or more dielectric support members (12’) for supporting the center conductor in contact with the center conductor and enclosed within the outer conductor; and a core volume (30) between the center conductor and the outer conductor, where the core volume is under vacuum or in a gas state. Also provided are methods of forming coaxial waveguide microstructutres by sequentially building processes and hermetic packages which include a coaxial microstructure.

Coaxial waveguide microstructures and methods of formation thereof

The storage capacities and areal densities found in magnetic disk drives are increasing very rapidly. Data is recorded in ever-narrower tracks which must be followed with extreme precision. Also, the advent of portable applications exposes these smaller drives to higher levels of vibration and shock. A description is given of the many factors which contribute to recording track misregistration (TMR) in today's drives. The mechanics of the drive and actuator and the architecture of the servo control system are also described. A projection is made for the TMR sensitivities and control system at an areal density of 10 Gb/in/sup 2/, having roughly 25000 tracks/in. A two-stage servo may be needed to achieve such track densities. This would comprise a high bandwidth microactuator for rapid position corrections of the recording head, coupled with a conventional actuator. The characteristics of such a microactuator are discussed, and operational examples of fabricated electroplated microactuators, driven electrostatically, are shown. The mechanical behavior of the devices and some of the factors which would affect their implementation are also described. >

Magnetic recording-head positioning at very high track densities using a microactuator-based, two-stage servo system

This paper presents an acceleration-threshold sensor fabricated with an electroplating technology which can be integrated on top of a pre-processed CMOS signal processing circuit. The device can be manufactured using a standard low-cost CMOS production line and then adding the mechanical sensor elements via a specialized back-end process. This makes the system especially interesting for automotive applications, such as airbag safety systems or transportation shock monitoring systems, where smaller size, improved functionality, high reliability and low costs are important.

https://iopscience.iop.org/article/10.1088/0960-1317/10/2/304/pdf

Additive electroplating technology as a post-CMOS process for the production of MEMS acceleration-threshold switches for transportation applications

A novel method to fabricate microchannels to be used in microelectronics chip cooling has been developed. The channels are made by microelectroplating with thick photoresist as the sacrificial molds. By removing the photoresist mold before sealing is completed, the channel can be made with only one mask. The cross section of the channels presented in the paper are 5-10 pm wide and 8-10 pm high. This method solves the problem of removing the mold from inside the extremely long channels (e.g., length-to-width ratio as large as a thousand). Unlike other methods for fabrication of microchannels, this method can be integrated into existing IC processes and delivers a practical way to cool IC chips with microchannels.

Fabrication of monolithic microchannels for IC chip cooling

The present invention relates to the fabrication of complicated electronic and/or mechanical structures and devices and components using homogeneous or heterogeneous 3D additive build processes. In particular the invention relates to selective metallization processes including electroless and/or electrolytic metallization.

Methods of fabricating electronic and mechanical structures

It is reported that a 3-D fabrication process, based on sputtering of a thin-film plating base, on conventional UV lithography, and on electrochemical deposition of gold, makes microstructures of considerable height and resolution possible. The thin-film formation and the lithographic process are outlined, particular attention being paid to layer deposition and structure printing. The present resolution limit is about 4.5 mu m for a 30- mu m-thick resist. Much thicker layers (80 mu m) can be printed with reduced resolution. The results are discussed and process characteristics relevant in various applications are considered. >

Fabrication of high depth-to-width aspect ratio microstructures

A fabrication process based on sputtering of a thin film plating base, on conventional UV depth lithography, and on electrochemical deposition of gold, makes microstructures of arbitrary shape in the third dimension and of considerable height (up to 80 mu m) and resolution (aspect ratio: about 10) possible. Applications for the fabrication of microstructures are discussed.

https://internal.iopscience.iop.org/article/10.1088/0960-1317/3/3/015/pdf

Selectively released microstructures electroplated into thick positive photoresist

The uniformity and deformation of electrochemical deposition (ECD) bumps get more and more important with the pitch shrinking and density increasing according to the requirement of modern electronic industry. In this paper, wafer level diameter and thickness distribution, surface roughness and hardness of Au bumps were characterized under different electroplating current densities and bath temperatures. Some valuable results were obtained. First, the diameter of ECD Au bumps was enlarged for 5–30 μm at all positions on the wafer for both the bumps of 10–100 μm diameters. Electroplated at 40 °C, the diameter distribution of Au bumps was similar to that of photoresist. While electroplated at 60 °C, its distribution was more symmetric. Second, more uniform thickness distribution of Au bumps was obtained when the bath temperature increased from 40 to 60 °C or the electroplating current density decreased from 8 to 3 mA/cm2. Third, the Au bumps electroplated at 60 °C exhibited the surface roughness of 105–125 nm independent of electroplating current densities. The Au bumps electroplated at 40 °C exhibited the surface roughness of 40–45 nm for 3 mA/cm2 and 5 mA/cm2 and 923.45 nm for 8 mA/cm2. Fourth, the hardness of Au bumps decreased with electroplating temperature increasing from 40 to 60 °C. The difference of hardness got at between 40 and 60 °C can be vanished by the following anneal process at 60 °C. In addition, the big differences among different current densities electroplated at 40 °C can also be vanished by the anneal process. Finally, possible reasons leading to above results were discussed.

Profile of the wafer level ECD gold bumps under variable parameters

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Fabrication of high depth-to-width aspect ratio microstructures

Selectively released microstructures electroplated into thick positive photoresist

Profile of the wafer level ECD gold bumps under variable parameters