O. Delorme
University of Montpellier
16 Papers
19 Citations
O. Delorme is an academic researcher from University of Montpellier. The author has contributed to research in topics: Quantum well & Molecular beam epitaxy. The author has an hindex of 6, co-authored 14 publications. Previous affiliations of O. Delorme include Centre national de la recherche scientifique.
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Papers
GaSbBi/GaSb quantum well laser diodes
O. Delorme,O. Delorme,Laurent Cerutti,Laurent Cerutti,Esperanza Luna,G. Narcy,G. Narcy,Achim Trampert,Eric Tournié,Eric Tournié,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez +11 more
TL;DR: In this paper, structural and optical properties of GaSbBi single layers and GaSBBi/GaSb quantum well heterostructures grown by molecular beam epitaxy on GAsb substrates are reported.
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Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys
O. Delorme,O. Delorme,Laurent Cerutti,Laurent Cerutti,Eric Tournié,Eric Tournié,Jean-Baptiste Rodriguez,Jean-Baptiste Rodriguez +7 more
TL;DR: In this article, the epitaxial growth, structural and optical properties of GaSb 1−x Bi x layers are reported, and the incorporation of Bi into Ga Sb is varied in the 0
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Type I GaSb 1-x Bi x /GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment
Robert Kudrawiec,J. Kopaczek,O. Delorme,M. P. Polak,Marta Gladysiewicz,Esperanza Luna,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez +8 more
TL;DR: In this paper, a set of GaSb1-xBix/GaSb quantum wells (QWs) of various widths and contents were grown by molecular beam epitaxy and investigated by photoreflectance (PR) spectroscopy.
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Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications
Esperanza Luna,O. Delorme,Laurent Cerutti,Eric Tournié,Jean-Baptiste Rodriguez,Achim Trampert +5 more
TL;DR: In this paper, an in-depth microstructural analysis of a series of Ga(Sb,Bi) epilayers and quantum well structures was performed using transmission electron microscopy.
Molecular-beam epitaxy of GaInSbBi alloys
O. Delorme,Laurent Cerutti,Esperanza Luna,Achim Trampert,Eric Tournié,Jean-Baptiste Rodriguez +5 more
TL;DR: In this article, the authors have grown GaInSbBi/GaSb multiquantum well (MQW) structures by molecular beam epitaxy and observed that the addition of In strongly modifies and reduces the Bi incorporation into GaSb.
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