Nolan S. Hendricks
Air Force Research Laboratory
15 Papers
Nolan S. Hendricks is an academic researcher from Air Force Research Laboratory. The author has contributed to research in topics: Schottky diode & Diode. The author has an hindex of 3, co-authored 3 publications.
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Papers
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs
Kelson D. Chabak,Jonathan McCandless,Neil Moser,Andrew J. Green,Krishnamurthy Mahalingam,Antonio Crespo,Nolan S. Hendricks,Brandon M. Howe,Stephen E. Tetlak,Kevin D. Leedy,Robert C. Fitch,Daiki Wakimoto,Kohei Sasaki,Akito Kuramata,Gregg H. Jessen +14 more
TL;DR: In this paper, a Si-doped homoepitaxial channel grown by molecular beam epitaxy was removed using a gate recess process to partially remove the epitaxial channels under the 1-μm gated region to fully deplete at ${V}_{\textsf {GS}}= 0$ V.
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Lateral β-Ga2O3 field effect transistors
Kelson D. Chabak,Kevin D. Leedy,Andrew J. Green,Shin Mou,Adam T. Neal,Thaddeus J. Asel,Eric R. Heller,Nolan S. Hendricks,Kyle J. Liddy,Antonio Crespo,Nicholas C. Miller,Miles Lindquist,Neil Moser,Robert C. Fitch,Dennis E. Walker,Donald L. Dorsey,Gregg H. Jessen +16 more
TL;DR: In this article, a review of BGO epitaxial materials and lateral field effect transistors developments, highlight early achievements and discuss engineering solutions with power switching and radio frequency applications in mind.
113
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes
Esmat Farzana,Arkka Bhattacharyya,Nolan S. Hendricks,Takeki Itoh,Sriram Krishnamoorthy,James S. Speck +5 more
TL;DR: In this paper , a vertical β-Ga2O3 power diodes with oxidized-metal Schottky contact (PtOx) and high permittivity (high-κ) dielectric (ZrO2) field plate was proposed to improve reverse blocking at both Schotty contact surfaces and edges.
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Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
TL;DR: High-voltage vertical β-Ga2O3 Schottky diodes with high permittivity dielectric field plate exhibit low leakage and high breakdown voltage.
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