The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Advanced Thermoelectric Design: From Materials and Structures to Devices

Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

/pdf/theory-of-enhancement-of-thermoelectric-properties-of-2rvreb7dv1.pdf

Theory of enhancement of thermoelectric properties of materials with nanoinclusions.

Thermoelectric materials are capable of converting heat and electricity to each other Thermoelectric devices can be miniaturized and highly integrated with existing semiconductor chip systems with microgenerators or microrefrigerators After years of research and accumulation, BiTe series, SnSe series, CuSe series, half-Heusler series, multicomponent oxides series, organic–inorganic composites series, and GeTe/PbTe series have been found to have excellent thermoelectric properties According to theoretical calculation, when the diameter of Bi2Te3 nanowires is 5 A, the ZT value reaches 14, and graphdiyne has a ZT value of 48 at 300 K Experimental measurements revealed that the ZT value of n-type SnSe reached 28 This review would focus on the updated experimental and theoretical achievements of seven kinds of materials, including BiTe series, SnSe series, CuSe series, multicomponent oxides, half-Heusler alloys, organic–inorganic composites, and GeTe/PbTe series The preparation method, microstructure characteristics, device structure, and thermoelectric properties of each material will be described in detail By analyzing the performance of these materials, three possible development directions are put forward for how to further improve the thermoelectric properties of materials

Review of current high-ZT thermoelectric materials

Thermoelectric energy conversion is an all solid-state technology that relies on exceptional semiconductor materials that are generally optimized through sophisticated strategies involving the engineering of defects in their structure. In this review, we summarize the recent advances of defect engineering to improve the thermoelectric (TE) performance and mechanical properties of inorganic materials. First, we introduce the various types of defects categorized by dimensionality, i.e. point defects (vacancies, interstitials, and antisites), dislocations, planar defects (twin boundaries, stacking faults and grain boundaries), and volume defects (precipitation and voids). Next, we discuss the advanced methods for characterizing defects in TE materials. Subsequently, we elaborate on the influences of defect engineering on the electrical and thermal transport properties as well as mechanical performance of TE materials. In the end, we discuss the outlook for the future development of defect engineering to further advance the TE field.

Defect engineering in thermoelectric materials: what have we learned?

Due to the nature of their liquid-like behavior and high dimensionless figure of merit, Cu2 X (X = Te, Se, and S)-based thermoelectric materials have attracted extensive attention. The superionicity and Cu disorder at the high temperature can dramatically affect the electronic structure of Cu2 X and in turn result in temperature-dependent carrier-transport properties. Here, the effective strategies in enhancing the thermoelectric performance of Cu2 X-based thermoelectric materials are summarized, in which the proper optimization of carrier concentration and minimization of the lattice thermal conductivity are the main focus. Then, the stabilities, mechanical properties, and module assembly of Cu2 X-based thermoelectric materials are investigated. Finally, the future directions for further improving the energy conversion efficiency of Cu2 X-based thermoelectric materials are highlighted.

https://espace.library.uq.edu.au/view/UQ:4704b7d/UQ4704b7d_OA.pdf

Promising and Eco-Friendly Cu 2 X-Based Thermoelectric Materials: Progress and Applications

Significant enhancement of figure-of-merit in carbon-reinforced Cu2Se nanocrystalline solids

Thermoelectric (TE) materials have attracted extensive interest because of their ability to achieve direct heat-to-electricity conversion. They provide an appealing renewable energy source in a variety of applications by harvesting waste heat. The record-breaking figure of merit reported for single crystal SnSe has stimulated related research on its polycrystalline counterpart. Boosting the TE conversion efficiency requires increases in the power factor and decreases in thermal conductivity. It is still a big challenge, however, to optimize these parameters independently because of their complex interrelationships. Herein, we propose an innovative approach to decouple electrical and thermal transport by incorporating carbon fiber (CF) into polycrystalline SnSe. We show that the incorporation of highly conductive CF can successfully enhance the electrical conductivity, while greatly reducing the thermal conductivity of polycrystalline SnSe. As a result, a high TE figure-of-merit (zT) of 1.3 at 823 K is obtained in p-type SnSe/CF composite polycrystalline materials. Furthermore, SnSe samples incorporated with CFs exhibit superior mechanical properties, which are favorable for device fabrication applications. Our results indicate that the dispersion of CF can be a good way to greatly improve both TE and mechanical performance.

Enhancing the Thermoelectric Performance of Polycrystalline SnSe by Decoupling Electrical and Thermal Transport through Carbon Fiber Incorporation

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Significant enhancement of figure-of-merit in carbon-reinforced Cu2Se nanocrystalline solids

Enhancing the Thermoelectric Performance of Polycrystalline SnSe by Decoupling Electrical and Thermal Transport through Carbon Fiber Incorporation