Nikola Pekas
National Institute for Nanotechnology
16 Papers
151 Citations
Nikola Pekas is an academic researcher from National Institute for Nanotechnology. The author has contributed to research in topics: Raman spectroscopy & Molecular memory. The author has an hindex of 9, co-authored 16 publications. Previous affiliations of Nikola Pekas include McGill University & University of Utah.
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Papers
Giant magnetoresistance monitoring of magnetic picodroplets in an integrated microfluidic system
TL;DR: In this paper, the integration of giant magnetoresistance (GMR) sensors with a microfluidic system for the velocity and size monitoring, and enumeration of flowing magnetic entities is described.
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Magnetic particle diverter in an integrated microfluidic format
TL;DR: In this article, a fully integrated micromagnetic particle diverter and microfluidic system is described. But the authors focus on the magnetic field perturbed at the micro-scale by underlying current straps.
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Musical molecules: the molecular junction as an active component in audio distortion circuits.
Adam Johan Bergren,Lucas Zeer-Wanklyn,Lucas Zeer-Wanklyn,Mitchell Semple,Nikola Pekas,Bryan Szeto,Richard L. McCreery,Richard L. McCreery +7 more
TL;DR: Molecular junctions that have a non-linear current-voltage characteristic consistent with quantum mechanical tunneling are demonstrated as analog audio clipping elements in overdrive circuits widely used in electronic music, particularly with electric guitars.
Electrostatic actuator with liquid metal–elastomer compliant electrodes used for on-chip microvalving
TL;DR: In this article, the authors describe a new class of electrostatic actuators with a compliant electrode made of liquid metal alloy contained by a thin elastomeric membrane and illustrate the use of such actuators as on-chip microvalves for gas flow control.
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Redox driven conductance changes for resistive memory
Lian C. T. Shoute,Lian C. T. Shoute,Nikola Pekas,Yiliang Wu,Richard L. McCreery,Richard L. McCreery +5 more
TL;DR: In this paper, the relationship between bias-induced redox reactions and resistance switching is considered for memory devices containing TiO2 or a conducting polymer in "molecular heterojunctions" consisting of thin (2-25 nm) films of covalently bonded molecules, polymers, and oxides.
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