Nannan Wang
National University of Defense Technology
15 Papers
52 Citations
Nannan Wang is an academic researcher from National University of Defense Technology. The author has contributed to research in topics: Amorphous solid & Thin film. The author has an hindex of 8, co-authored 15 publications.
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Papers
Analog memristors based on thickening/thinning of Ag nanofilaments in amorphous manganite thin films.
TL;DR: A new analog memristor based on metal nanofilaments thickening/thinning in ECM cells, which can be extended to other resistive switching materials, and may enable the development of beyond von Neumann computers.
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Annealing effects on the microstructure, magnetism and microwave-absorption properties of Fe/TiO2 nanocomposites
TL;DR: In this article, a controllable two-step electrodeposition technique using anodic aluminum oxide (AAO) membrane as the template was used to obtain an outstanding material for the applications of magnetic recording and microwave absorption.
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Diode-like volatile resistive switching properties in amorphous Sr-doped LaMnO3 thin films under lower current compliance
TL;DR: In this paper, the diode-like volatile resistive switching (RS) properties of anamorphous Sr-doped LaMnO3 (a-LSMO) thin films were investigated under lower compliance current (CC).
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Programmable metallization cells based on amorphous La0.79Sr0.21MnO3 thin films for memory applications
TL;DR: In this article, a programmable metallization cell based on amorphous La0.79Sr0.21MnO3 (a-LSMO) thin films for nonvolatile memory applications was demonstrated.
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Nanoscale electrochemical metallization memories based on amorphous (La, Sr)MnO3 using ultrathin porous alumina masks
TL;DR: In this article, the resistive switching properties of the individual Ag/a-LSMO/Pt ECM cell were directly measured using a conductive atomic force microscope and the cells exhibited typical RS characteristics and the OFF/ON resistance ratio is as high as 102.
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