Metal halide perovskites (MHPs) have been a hot research topic due to their facile synthesis, excellent optical and optoelectronic properties, and record-breaking efficiency of corresponding optoelectronic devices. Nowadays, the development of miniaturized high-performance photodetectors (PDs) has been fueling the demand for novel photoactive materials, among which low-dimensional MHPs have attracted burgeoning research interest. In this report, the synthesis, properties, photodetection performance, and stability of low-dimensional MHPs, including 0D, 1D, 2D layered and nonlayered nanostructures, as well as their heterostructures are reviewed. Recent advances in the synthesis approaches of low-dimensional MHPs are summarized and the key concepts for understanding the optical and optoelectronic properties related to the PD applications of low-dimensional MHPs are introduced. More importantly, recent progress in novel PDs based on low-dimensional MHPs is presented, and strategies for improving the performance and stability of perovskite PDs are highlighted. By discussing recent advances, strategies, and existing challenges, this progress report provides perspectives on low-dimensional MHP-based PDs in the future.

Low-Dimensional Metal Halide Perovskite Photodetectors.

The past decade has witnessed tremendous advances in synthesis of metal halide perovskites and their use for a rich variety of optoelectronics applications. Metal halide perovskite has the general formula ABX3, where A is a monovalent cation (which can be either organic (e.g., CH3NH3+ (MA), CH(NH2)2+ (FA)) or inorganic (e.g., Cs+)), B is a divalent metal cation (usually Pb2+), and X is a halogen anion (Cl-, Br-, I-). Particularly, the photoluminescence (PL) properties of metal halide perovskites have garnered much attention due to the recent rapid development of perovskite nanocrystals. The introduction of capping ligands enables the synthesis of colloidal perovskite nanocrystals which offer new insight into dimension-dependent physical properties compared to their bulk counterparts. It is notable that doping and ion substitution represent effective strategies for tailoring the optoelectronic properties (e.g., absorption band gap, PL emission, and quantum yield (QY)) and stabilities of perovskite nanocrystals. The doping and ion substitution processes can be performed during or after the synthesis of colloidal nanocrystals by incorporating new A', B', or X' site ions into the A, B, or X sites of ABX3 perovskites. Interestingly, both isovalent and heterovalent doping and ion substitution can be conducted on colloidal perovskite nanocrystals. In this review, the general background of perovskite nanocrystals synthesis is first introduced. The effects of A-site, B-site, and X-site ionic doping and substitution on the optoelectronic properties and stabilities of colloidal metal halide perovskite nanocrystals are then detailed. Finally, possible applications and future research directions of doped and ion-substituted colloidal perovskite nanocrystals are also discussed.

Doping and ion substitution in colloidal metal halide perovskite nanocrystals.

Perovskite‐Based Phototransistors and Hybrid Photodetectors

As a wide‐bandgap semiconductor material, titanium dioxide (TiO2), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting‐edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and low‐cost fabrication, the construction of high‐performance photodetectors (PDs) based on TiO2 nanostructures is being extensively developed. An elaborate microtopography and device configuration is the most widely used strategy to achieve efficient TiO2‐based PDs with high photoelectric performances; however, a deep understanding of all the key parameters that influence the behavior of photon‐generated carriers, is also highly required to achieve improved photoelectric performances, as well as their ultimate functional applications. Herein, an in‐depth illustration of the electrical and optical properties of TiO2 nanostructures in addition to the advances in the technological issues such as preparation, microdefects, p‐type doping, bandgap engineering, heterojunctions, and functional applications are presented. Finally, a future outlook for TiO2‐based PDs, particularly that of further functional applications is provided. This work will systematically illustrate the fundamentals of TiO2 and shed light on the preparation of more efficient TiO2 nanostructures and heterojunctions for future photoelectric applications.

Application of Nanostructured TiO2 in UV Photodetectors: A Review

Recently, all-inorganic cesium lead halide (CsPbX3, X = Cl, Br, I) perovskite nanocrystals (NCs) have attracted much attention because of their excellent photophysical properties and promising applications in diverse fields. In this review article, the synthetic methods have been briefly summarized first, followed by the morphological control of CsPbX3 NCs. To improve their photophysical properties as well as stability, surface passivation strategies, such as chemical treatment and encapsulation approaches, are used and have been summarized. Their representative applications in various fields, including light emitting diodes (LEDs), solar cells, photodetectors, lasers and photocatalysis, have been introduced. Finally, a brief outlook of this field has been proposed to point out some important challenges and possible solutions.

All-inorganic cesium lead halide perovskite nanocrystals: synthesis, surface engineering and applications

In the current work, we fabricate an all-inorganic perovskite quantum dot-based photodetector with bifunctional linker molecules, which is highly superior to its counterpart without the linker The ultrahigh on/off ratio of 105 is two orders of magnitude higher than that of the device without the ligand treatment Moreover, the responsivity increases from ∼22 A W−1 to ∼245 A W−1 and the detectivity from 35 × 1012 Jones to 89 × 1013 Jones To gain further insight into the effect of ligand-exchange by bifunctional linker molecules besides surface passivation, we divide the electron transfer process into two parts, the electron transfer from quantum dots (QDs) to the linker and from the linker to TiO2 Injection of photoexcited electrons from colloidal CsPbBr3 QDs into TiO2 nanoparticles by bifunctional linker molecules is found to be much faster Continuous-wave and time-resolved fluorescence spectra exhibit strong quenching for CsPbBr3 QDs assembled by the linker or coupled to TiO2 nanoparticles, which is consistent with electron transfer for QDs From the results of the transient absorption measurement and fluorescence lifetime, the electron transfer time of QDs–TiO2 linked by the bifunctional molecules is calculated to be within 40 ns, while that from QDs to TiO2 particles directly is estimated to be ∼290 ns This indicates that much faster electron injection occurs under the effect of the electron linker In addition, the linker molecule modification can improve the adsorption of mp-TiO2 to capture more QDs

Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection

Germanium-based photodetector is a key component in silicon based photonics because of its unique properties of response at telecommunication band and compatibility with CMOS techniques. However, the limitations of low quantum efficiency and high surface recombination in ultrathin germanium film, especially in the near-infrared range, put huge obstructions on the road toward applications. Nowadays, practical applications require more nanoscale devices with lower power consumption as well as higher responsivity and response speed. In this work, we first demonstrate a germanium–graphene hybrid structure photodetector that consists of an ultrathin 20 nm germanium layer and a monolayer graphene. The photodetector can achieve a broadband detection from ultraviolet to near-infrared range. A conductive gain of 155 and a responsivity of 66.2 A W–1 are achieved, which is about 3 orders of magnitude higher than pure graphene photodetectors and about 4 times larger than pure germanium photodetectors. Such enhancemen...

Ultrathin Broadband Germanium–Graphene Hybrid Photodetector with High Performance

High-Performance Germanium Waveguide Photodetectors on Silicon

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Insight into the effect of ligand-exchange on colloidal CsPbBr3 perovskite quantum dot/mesoporous-TiO2 composite-based photodetectors: much faster electron injection

Ultrathin Broadband Germanium–Graphene Hybrid Photodetector with High Performance

High-Performance Germanium Waveguide Photodetectors on Silicon