13 Papers
96 Citations
Naiman Liao is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: Amorphous silicon & Plasma-enhanced chemical vapor deposition. The author has an hindex of 5, co-authored 13 publications.
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Papers
Structure and 1/f noise of boron doped polymorphous silicon films.
TL;DR: The results demonstrate that the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lower than that of amorphous silicon.
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Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge
TL;DR: The ordering evolution of the amorphous network of a-Si:H thin films with increasing initial silane-gas temperatures was investigated by Raman spectroscopy as mentioned in this paper.
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Electron irradiation effects on the properties of heavily phosphorus-doped a-Si?:?H films prepared from undiluted silane
Naiman Liao,Wei Li,Ya Dong Jiang,Ze-Han Wu,Li Shuangding,Ziji Liu,Zhou Li,Xu Jin,Yuanming Chen +8 more
TL;DR: In this article, the effects of 1.0 MeV electron irradiation on the dark conductivity and amorphous network of heavily phosphorus-doped a-Si : H films have been studied.
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Influence of substrate temperature on the microstructure and optical properties of hydrogenated silicon thin film prepared with pure silane
TL;DR: In this paper, the optical properties and crystallization of hydrogenated silicon (Si:H) on various substrate temperatures were studied, where pure silane was used as source gas instead of using high-diluted silane in H 2.
7
Noise in boron doped amorphous/microcrystallization silicon films
TL;DR: In this paper, the transition between hydrogenated amorphous silicon (a-Si:H) and hydrogenated microcrystalline silicon (μc-Si-H) was characterized by X-ray diffraction analysis.
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