Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-established processing techniques associated with Si and the excellent performance of the related devices. The hybrid dimension vdW heterojunction composed of 2D materials and Si has the advantages of excellent performance, low fabrication cost, and easy integration with silicon-based devices. It has unique advantages in the field of heterojunction photodetectors. This review provides an overview of the recent advancements in photodetectors based on 2D material/Si heterojunctions. First, we present the background and motivation of the review. Next, we discuss the key performance metrics for evaluating photodetector performance. Then, we review the recent progress made in the field of 2D material/Si heterojunction photodetectors. Finally, we summarize the findings and offer future prospects.

Recent Advances in Photodetectors Based on Two-Dimensional Material/Si Heterojunctions

High sensitivity Ga2O3 ultraviolet photodetector by one-step thermal oxidation of p-GaN films

We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from β-Ga2O3 thin films grown via metal–organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality β-Ga2O3 films with a (−201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 105 in the photodetector with the metal–semiconductor–metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 1015 cm·Hz1/2/W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the β-Ga2O3/AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the β-Ga2O3/AlN/p-Si photodetector at 5 V bias are 2.7 × 103, 11.84 A/W, and 8.31 × 1013 cm·Hz1/2/W, respectively. The improved structural quality of β-Ga2O3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for β-Ga2O3(−201)/AlN(002) compared to that of 20.83% for β-Ga2O3(−201)/Si(111), as well as the elimination of the native amorphous SiOx surface layer on the Si substrate during the initial growth of oxide thin films. 

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition.

High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions

Gallium oxide (Ga2O3)-based solar-blind photodetectors (SBPDs) have shown promising applications. However, the concentration of native oxygen vacancy (VO) impacts the photoelectrical performance of the Ga2O3 film. Herein, a nitrogen-doping method...

Regulation of oxygen vacancies in Nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UVphotodetectors

The superior optical and electronic characteristics of quasi-two-dimensional β-Ga2O3 make it suitable for solar-blind (200-280 nm) photodetectors (PDs). The metal-semiconductor-metal (MSM) PDs commonly suffer from low photoresponsivity, slow response speed, and a narrow detection wavelength range despite their simple fabrication process. Herein, we report a high-performance MSM PD by integrating exfoliated β-Ga2O3 flakes with zero-dimensional graphene quantum dots (GQDs), which exhibits the advantages of enhancing the photoresponsivity, shortening the photoresponse time, and stimulating a broad range of photon detection. The hybrid GQDs/β-Ga2O3 heterostructure PD is sensitive to deep-ultraviolet (DUV) light (250 nm) with an ultrahigh responsivity (R of ∼2.4 × 105 A/W), a large detectivity (D* of ∼4.3 × 1013 Jones), an excellent external quantum efficiency (EQE of ∼1.2 × 108%), and a fast photoresponse (150 ms), which is superior to the bare β-Ga2O3 PD. These improvements result from effective charge transfer due to the introduction of GQDs, which enhance the light absorption and the generation of electron-hole pairs. In addition, the hybrid GQDs/β-Ga2O3 PD also exhibits better photoelectric performance than the bare β-Ga2O3 PD at a 1000 nm wavelength. As a conclusion, the hybrid GQDs/β-Ga2O3 DUV photodetector shows potential applications in commercial optoelectronic products and provides an alternative solution for the design and preparation of high-performance photodetectors.

A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity.

A Solar-Blind Photodetector with Ultrahigh Rectification Ratio and Photoresponsivity Based on the Mote2/Ta:Β-Ga2o3 Pn Junction

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A Heterostructured Graphene Quantum Dots/β-Ga2O3 Solar-Blind Photodetector with Enhanced Photoresponsivity.

A Solar-Blind Photodetector with Ultrahigh Rectification Ratio and Photoresponsivity Based on the Mote2/Ta:Β-Ga2o3 Pn Junction