We report on the influence of the improved L21 ordering degree on the magnetic properties of Co2MnSi Heusler films. Different fractions of the L21 phase are obtained by different post-growth annealing temperatures ranging from 350 degC to 500 degC. Room temperature magneto-optical Kerr effect measurements reveal an increase of the coercivity at an intermediate annealing temperature of 425 degC, which is a fingerprint of an increased number of pinning centers at this temperature. Furthermore, Brillouin light scattering studies show that the improvement of the L21 order in the Co2MnSi films is correlated with a decrease of the saturation magnetization by about 9%. The exchange stiffness constant of Co2MnSi, however, increases by about 8% when the L21 order is improved. Moreover, we observe a drop of the cubic anisotropy constant K1 by a factor of 10 for an increasing amount of the L21 phase.

Influence of the L21 ordering degree on the magnetic properties in Co2MnSi Heusler films

Interparticle spacing dependence of magnetic anisotropy and dipolar interaction of Ni nanocrystals embedded in epitaxial BaTiO 3 matrix

We report on the highest two-terminal magnetoresistance (MR) ratio at room temperature in semiconductor-based lateral spin-valve devices. From first-principles calculations, we predict energetically stable ferromagnet–semiconductor heterointerfaces consisting of Co2MnSi (CMS) and Ge(111) upon insertion of Fe atomic layers. Using low-temperature molecular beam epitaxy, we demonstrate L21-ordered CMS epilayers at 80 °C on Ge(111), where the CMS layer can be utilized as a spin injector and detector. Two-terminal MR ratios as high as 0.1% are achieved in n-Ge-based lateral spin-valve devices with CMS/Fe/Ge Schottky tunnel contacts annealed at 200 °C. This study will open a path for semiconductor-based spintronic devices with a large MR ratio at room temperature.

Room-temperature two-terminal magnetoresistance ratio reaching 0.1% in semiconductor-based lateral devices with L21-ordered Co2MnSi

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes. Upon comparison of the results with the results of in-plane graphene based MTJs reported in the past, it is observed that out-of-plane structures offer a high TMR of ∼100% and the transport phenomenon is tunneling since there are no transmission states near the Fermi level. However, in in-plane structures, the transport phenomenon cannot be tunneling since there are a significant number of transmission states near the Fermi level, although a high Magneto Resistance (MR) of ∼90% is observed. Both the TMR and Spin Injection Efficiency η (Spin-Filtration) are higher in out-of-plane structures in comparison to in-plane structures, which is due to the graphene sheet acting as a perfect barrier in out-of-plane structures, which results in negligible spin down current (I↓) in both the Parallel Configuration (PC) and Antiparallel Configuration (APC).

Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs

Effect of oxygen migration on magnetic anisotropy and damping constant in perpendicular Ta/CoFeB/Gd/MgO/Ta multilayers

Epitaxial FePt(001)/MgO/FePt magnetic tunnel junctions with L10-FePt electrodes showing perpendicular magnetic anisotropy were fabricated by molecular beam epitaxial growth. Tunnel magnetoresistance ratios of 21% and 53% were obtained at 300 K and 10 K, respectively. Our previous work, based on transmission electron microscopy, confirmed a semi-coherent interfacial structure with atomic steps (Kohn et al., APL 102, 062403 (2013)). Here, we show by x-ray photoemission spectroscopy and first-principles calculation that the bottom FePt/MgO interface is either Pt-terminated for regular growth or when an Fe layer is inserted at the interface, it is chemically bonded to O. Both these structures have a dominant role in spin dependent tunneling across the MgO barrier resulting in a decrease of the tunneling magnetoresistance ratio compared with previous predictions.

Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions

We present an experimental study identifying structural reasons that degrade spin-polarization of Co2MnSi thin films deposited on MgO(001) substrates. Through the fabrication of magnetic tunnel junctions, we measure a range of values for tunneling magneto-resistance (TMR) ratios following post-deposition annealing and epitaxial crystallization of the Heusler film. These TMR ratios reflect qualitatively the change in spin polarization of the Co2MnSi thin films. Low-temperature annealing results in low spin-polarization due to a high fraction of an amorphous phase. As annealing temperatures increase, the fraction of L21 and B2 chemically ordered phases increases, thus improving significantly the spin-polarization. However, for samples annealed at higher temperatures, significant degradation in the cubic magneto-crystalline anisotropy is observed, which we attribute to the detection of manganese diffusion into the MgO substrate. This Mn diffusion is manifested in a reduction of the value of the TMR ratio, namely, the spin polarization. Additionally, the maximum TMR ratio measured here, approximately 65% at room-temperature, is limited because the semi-coherent interface of Co2MnSi with the MgO substrate terminates with a Mn-Si layer.

The role of structure on magneto-transport properties of Heusler Co2MnSi films deposited on MgO(001)

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Effect of interfacial structures on spin dependent tunneling in epitaxial L10-FePt/MgO/FePt perpendicular magnetic tunnel junctions

The role of structure on magneto-transport properties of Heusler Co2MnSi films deposited on MgO(001)