pH sensors are widely used in chemical and biological applications. Metal oxides-based pH sensors have many attractive features including insolubility, stability, mechanical strength, electrocatalyst and manufacturing technology. Various metal oxide thin films prepared by radio frequency (R.F.) magnetron sputtering have attractive features, including high pH sensitivity, fast response, high resolution, good stability and reversibility as well as potential for measuring pH under conditions that are not favourable for the commonly used glass electrodes-based pH sensors. In addition, thin film pH sensors prepared by R.F. magnetron sputtering offer many advantages, such as ease of packaging, low cost through the use of standard microfabrication processes, miniaturisation, capability of measuring pH at high temperatures, ruggedness and disposability. In this paper, recent development of R.F. magnetron sputtered thin films for pH sensing applications are reviewed.

/pdf/recent-developments-in-r-f-magnetron-sputtered-thin-films-3a8zigbg4j.pdf

Recent Developments in R.F. Magnetron Sputtered Thin Films for pH Sensing Applications—An Overview

A comprehensive review of FET-based pH sensors: materials, fabrication technologies, and modeling

The reactive cathodic arc deposition technique was used to produce Ti nitride and oxynitride coatings on 304 stainless steel substrates (SS). Both mono (SS/TiN, SS/TiNO) and bilayer coatings (SS/TiN/TiNO and SS/TiNO/TiN) were investigated in terms of elemental and phase composition, microstructure, grain size, morphology, and roughness. The corrosion behavior in a solution consisting of 0.10 M NaCl + 1.96 M H2O2 was evaluated, aiming for biomedical applications. The results showed that the coatings were compact, homogeneously deposited on the substrate, and displaying rough surfaces. The XRD analysis indicated that both mono and bilayer coatings showed only cubic phases with (111) and (222) preferred orientations. The highest crystallinity was shown by the SS/TiN coating, as indicated also by the largest grain size of 23.8 nm, which progressively decreased to 16.3 nm for the SS/TiNO monolayer. The oxynitride layers exhibited the best in vitro corrosion resistance either as a monolayer or as a top layer in the bilayer structure, making them a good candidate for implant applications.

https://www.mdpi.com/2079-6412/10/8/710/pdf

In Vitro Corrosion of Titanium Nitride and Oxynitride-Based Biocompatible Coatings Deposited on Stainless Steel

The influences of annealing temperature in N2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si–N bonding at the interface gradually transforms to Si–O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si–O–Al bonding state can be detected in the 900 °C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.

/pdf/effects-of-post-annealing-treatments-on-the-interfacial-27rytmwq74.pdf

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.

Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering

The AlON films grown on Si(100) substrates by using radio frequency (r.f.) magnetron sputtering from high purity aluminum (99.999% Al) target with a novel reactive gas-timing technique. The 100 nm thick of AlON films were deposited with 200 watts r.f. power and the substrate temperature is maintained at room temperature by the technique of gas-timing which varying flow-in sequence of high purity of Ar (99.999%) and N2 (99.9999%) gases fed into the sputtering chamber at 10:90 (sec) ratio. The composition and crystal orientation of AlON films affected by gas-timing of Ar and N2 were analyzed by Auger Electron Spectroscopy (AES) and X-ray diffraction (XRD). The oxygen atoms revealed by AES formed into a corporation in films was studied. This suggests that the oxygen contamination formed as AlOXNY compound may due to the residual oxygen in base pressure of 10-7 mbar and higher reactivity of oxygen in the reactor compared to nitrogen. The gas-timing technique used in the sputtering growth system shows the advantage of the oxygen quantity control, while the general sputtering process (without gas-timing technique) shows an increase of the oxygen composition depended on film thickness. The characterizations results clearly indicate that the gas-timing r.f. magnetron sputtering technique plays an important role to control the incorporation of oxygen and to form the nanocrystal-aluminum oxynitride films which very attractive for various sensors applications.

Oxygen Control on Nanocrystal-AlON Films by Reactive Gas-Timing Technique R.F. Magnetron Sputtering and Annealing Effect

This innovative pH-ISFET sensor used nanocrystalline-AlN thin film as ion-sensitive membrane which prepared by reactive gas-timing r.f. magnetron sputtering without heating substrate and post annealing. The technique of gas-timing r.f. magnetron sputtering purposed by us, the feeding gas is on-off controlled periodically in such a way that the deposited AlOxNy film has a quite stable composition of aluminum, nitrogen and oxygen (Al:O:N=52:18:30%) all over the entire film. The AlN-ISFET devices were structured. The pH-sensitivity characteristics show increasing sensitivity depended on film thickness. The highest sensitivity is 54.50 mV/pH achieved from 80 nm of AlN thin film which is comparable to our previous report Si3N4-ISFET devices.

The innovative AlN-ISFET based pH sensor

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

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Oxygen Control on Nanocrystal-AlON Films by Reactive Gas-Timing Technique R.F. Magnetron Sputtering and Annealing Effect

The innovative AlN-ISFET based pH sensor

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier