General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The ...

Ion beams in silicon processing and characterization

The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.

Methods for controlling dopant concentration and activation in semiconductor structures

Described herein are processing conditions, techniques, and methods for preparation of ultra-shallow semiconductor junctions. Methods described herein utilize semiconductor surface processing or modification to limit the extent of dopant diffusion under annealing conditions (e.g. temperature ramp rates between 100 and 5000° C./second) previously thought impractical for the preparation of ultra-shallow semiconductor junctions. Also described herein are techniques for preparation of ultra-shallow semiconductor junctions utilizing the presence of a solid interface for control of dopant diffusion and activation.

Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering

The present invention provides methods for controlling defects in materials, including point defects, such as interstitials and vacancies, and extended defects, including dislocations and clusters. Defect control provided by the present invention allows for fabrication and processing of materials and/or structures having a selected abundance, spatial distribution and/or concentration depth profile of one or more types of defects in a material, such as vacancies and/or interstitials in a crystalline material. Methods of the invention are useful for processing materials by controlling defects to access beneficial physical, optical, chemical and/or electronic properties.

Defect engineering in metal oxides via surfaces

Amorphization of silicon by ion irradiation in dense plasma focus

Compound implants using Si and F pre-implants with B and BF2 doping implants are investigated for B and F diffusion effects and residual defect levels. Physical methods (RBS, SIMS, SRP) are combined with optical scanning and depth profiling techniques (TW, PAD, Raman) to investigate the insights to be gained from use of a fuller set of characterization tools for defect engineering.

Defect engineering of p+-junctions by multiple-species ion implantation

Diffusion of ion-implanted boron impurities into pre-amorphized silicon

The transition from electronic to nuclear stopping power mechanisms for < 10 keV B in Si has resulted in a new class of damage accumulation effects. Strong correlations are seen between beam current, wafer temperature during implant, anneal conditions and the damage accumulation, diffusion and activation for low-energy B implants. In response to these challenges, new characterization methods and processes are being explored; such as the use of multi-species implantation and depth profiling of damage distributions with photo-acoustic probes.

Shallow junction formation in Si-devices: Damage accumulation and the role of photo-acoustic probes and multi-species implantation

Dual ion implantation of F had B into silicon is studied. In a pre-amorphized silicon layer by F/sup +/ implants prior to B/sup +/ implantation at 10 keV with 3/spl times/10/sup 15//cm/sup 2/, broadening of B profile can be suppressed markedly in as-implanted B profiles. For instance, the depth of 0.23 /spl mu/m at a B concentration of 1/spl times/10/sup 18//cm/sup 3/ decreases to 0.18 /spl mu/m by this pre-amorphization. When these layers are annealed at 950/spl deg/C, B atoms diffuse rapidly 2.3 times faster in the pre-amorphized layer than in the single B/sup +/ implantation. In the high dose F/sup +/ implantation at doses above 1/spl times/10/sup 15//cm/sup 2/, F is trapped with annealing at the peak of the B profile as well as at the F profile peak and near the amorphous-crystalline interface. The effects of F dose and annealing temperature on the F precipitation are described.

https://ieeexplore.ieee.org/iel5/6566/17623/00813860.pdf

Dual ion implantation of non-dopant and dopant ions into Si for defect engineering of shallow p/sup +/-junctions

Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement (PAD) method. Boron ions were implanted at 10 keV with 1 × 10 1 5 ions/cm 2 and 3 X 10 1 5 ions/cm 2 into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950°C for 30 s by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of 5.93 eV for F-B binding energy in a segregated region.

Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

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