Qubits based on colour centres in diamond became a prominent system for solid-state quantum information processing and sensing. But the deterministic creation of qubits and the control of their environment are still critical issues, preventing the development of a room-temperature quantum computer. We report on the high creation yield of NV centres of 75% (a tenfold enhancement) by charge-assisted defect engineering, together with an improvement of their spin coherence. The method strongly favours the formation and negative charge state of the NV centres with respect to intrinsic diamond, while it hinders the formation of competing and perturbing defects such as di-vacancies or NVH complexes. We evidence spectrally the charge state tuning of the implantation-induced vacancies from V0 to V-, key element of this Coulomb-driven engineering. The generality of the method is demonstrated using several donors (phosphorous, oxygen and sulphur) and applying it to other centres (SnV and MgV) in diamond.

/pdf/coulomb-driven-single-defect-engineering-for-scalable-qubits-4r8rsxthch.pdf

Coulomb-driven single defect engineering for scalable qubits and spin sensors in diamond

Zinc oxide is a very promising material for short-wavelength light-emitting devices due to its large band gap and high exciton binding energy. Although great progress has been made in recent years, p-type doping and control over native defects introduced during or after material growth are still significant problems that hinder the development of efficient ZnO based optoelectronic devices. Here we demonstrate a versatile method for the growth or p-type or n-type ZnO nanorods from the same growth solution at temperature as low as 90 °C, where the conductivity type is controlled by the preparation of the seed layer for nanorod growth. The differences in the conductivity type can be attributed to dependency of native defect concentrations and hydrogen incorporation on the seed layer preparation method. Room temperature electroluminescence has been demonstrated from homojunction and heterojunction light emitting diodes containing p-ZnO nanorods.

Undoped p-type ZnO nanorods synthesized by a hydrothermal method

The effect of atomic hydrogen treatment upon the surface of partially graphitized nanodiamonds has been studied by photoemission spectroscopy. The C1s core level peak and valence band spectra of a partially graphitized nanodiamond sample were compared with those following hydrogen treatment and following subsequent annealing. We have observed a difference in the binding energy of the sp 3 component of the C1s peak and in the valence band which we believe can be assigned to either upward or downward band bending due to surface graphitization and hydrogenation of nanodiamonds, respectively. The data confirms that the graphitic layers which initially cover the nanodiamond particles can be removed through exposure to atomic hydrogen. This method could enable the preparation of hydrogen terminated and separate nanodiamond particles.

Atomic hydrogen treatment of nanodiamond powder studied with photoemission spectroscopy

Deep-mantle-derived noble gases in metamorphic diamonds from the Kokchetav massif, Kazakhstan

NEXAFS spectroscopy of CVD diamond films exposed to fusion relevant hydrogen plasma

https://www.si-o-net.com/nm_pubs/NM_Publications/drm%2012%20623%20Diffusion%20of%20hydrogen%20in%20undoped%20p-type%20and%20n-type%20doped%20diamonds.pdf

Diffusion of hydrogen in undoped, p-type and n-type doped diamonds

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Diffusion of hydrogen in undoped, p-type and n-type doped diamonds