N. Harjee

TL;DR: Using scanning gate microscopy to perturb the QSH edge states on a sub-micron scale, Wang et al. as discussed by the authors identify well-localized scattering sites which likely limit the expected non-dissipative transport in the helical edge channels.

TL;DR: In this paper, a self-sensing piezoresistive cantilever with low-impedance, electrically-shielded transmission lines is proposed to enable simultaneous topographical and electrical scanning probe microscopy.

TL;DR: In this article, the use of cracks patterned lithographically into the BOX layer prior to device release in two separate microcantilever fabrication processes was reported. In both processes, the patterned cracks were found to inhibit spontaneous cracking in critical regions near or under devices and improve device yield.

TL;DR: In this paper, a selective epitaxial fabrication method was proposed to form piezoresistors on the sidewalls of microstructures for in-plane sensing applications, which was found to be 2-7 times more sensitive than most ion-implanted cantilevers with equivalent dopant concentration.