A theory for class-J microwave amplifier operation as a function of drive level and fundamental load impedance is derived. Calculations show that, under appropriate operating conditions, it is sufficient to modulate the transistor load reactance to enable high-efficiency operation (>;70%) over a large output power dynamic range (>;10 dB) with high transistor power utilization. Such dynamic load modulation (DLM) networks are an ideal application of continuously tunable varactor technologies. Multiharmonic load-pull measurements are performed on a GaN HEMT and experimentally verify the theory of operation. A demonstrator amplifier using an SiC varactor technology is then designed and characterized by static measurements. The amplifier has a peak power of 38 dBm at 2.08 GHz and maintains efficiencies above 45% over 8 dB of power dynamic range. An analysis of the load network losses is performed to show the potential of the class-J DLM transmitter concept.

Theory and Design of Class-J Power Amplifiers With Dynamic Load Modulation

A new switch-mode power-amplifier (SMPA) topology particularly suitable for energy efficient amplification of RF pulsewidth modulation (RF-PWM) signals is derived. It is analytically shown that high efficiency can be maintained over a wide power dynamic range if the imaginary part of the Class-E load impedance is varied along with the duty cycle (pulsewidth). Using the theory developed, an explicit design procedure is presented that allows practical realization of the proposed topology from the circuit and component specifications. Following the design procedure, and using in-house (Chalmers University, Goteborg, Sweden) SiC varactor diodes to implement the tunable imaginary load impedance, a 2-GHz 10-W peak output power GaN HEMT circuit demonstrator is realized. RF-PWM input signals for characterization of the prototype power amplifier (PA) is generated with a dedicated 65-nm CMOS modulator. The measurements show that a drain efficiency >; 70% can be obtained over an 6.5-dB dynamic range, which verifies the theory presented and demonstrates the feasibility of the proposed PA topology.

https://publications.lib.chalmers.se/records/fulltext/local_150226.pdf

High-Efficiency RF Pulsewidth Modulation of Class-E Power Amplifiers

A new methodology for the design of single/multi-band power amplifiers (PAs) with dynamic load modulation (DLM) is presented. First, the topology for the output matching network (OMN) including the control varactor is selected. A comprehensive optimization of the OMN parameters is then developed by which varactor and transistor losses are considered to ensure maximum efficiency enhancement at each frequency. To verify the method, a dual-band PA with DLM is realized. Drain efficiencies of 75% and 60% at 685 MHz and 1.84 GHz, respectively, are measured at peak output power. At 10-dB output power back-off efficiencies of 43.5% and 49.5%, respectively, are obtained. Linearized modulated measurements with a 6.5-dB peak-to-average power ratio WCDMA signal show average drain efficiencies of 56% and 54% at 685 MHz and 1.84 GHz, respectively, at an adjacent channel leakage ratio of $-{\hbox{49}}$ and $- {\hbox{47.5 dBc}}$ , respectively. The proposed method shows the effectiveness of applying an optimization process for the design of single- or multi-band DLM PAs. The results demonstrate that near-optimum performance may be obtained in terms of efficiency enhancement for a given transistor and varactor-based OMN, thus making DLM competitive against other load modulation techniques.

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

This paper presents a new systematic and efficient method for the design of high-power varactor-based impedance tuners. By incorporating the varactor losses and voltage handling capabilities, the method allows the impedance tuning range to be maximized and losses to be minimized under high-power operating conditions. A 2.2-GHz large-signal double-stub tuner has been designed using the proposed methodology and SiC varactor diodes. Using comprehensive large-signal measurements, a 25-W input power handling is demonstrated up to $\Gamma _{\max } \approx ~0.8$ . Two-tone linearity measurements show an input third-order intercept point exceeding 50 dBm for most impedances. These results clearly demonstrate the feasibility of the proposed technique for the design of high-performance large-signal tuners.

Design and Large-Signal Characterization of High-Power Varactor-Based Impedance Tuners

A novel class-J operated power amplifier (PA) utilizing varactor-based dynamic load modulation is presented. It is theoretically shown that the proposed PA can maintain high average efficiency across more than 35% RF bandwidth by means of a purely reactive load modulation after the transistor output capacitance. The theory is experimentally verified by a 15 W GaN HEMT PA operating from 1.80 to 2.20 GHz, using SiC varactors as dynamically tunable load elements. In the band, the PA presents a power added efficiency (PAE) higher than 39% at 6 dB output power back-off. For a 3.84 MHz W-CDMA signal with 6.7 dB peak to average power ratio, an average PAE higher than 39% and an adjacent channel leakage ratio below −45.8 dBc are obtained across the entire band after linearization.

A class-J power amplifier with varactor-based dynamic load modulation across a large bandwidth

SiC Schottky diode varactors have been fabricated for use in microwave power applications, specifically the dynamic load modulation of power amplifiers. A custom doping profile has been employed to spread the C(V) over a large bias voltage range, thereby increasing the effective tuning range under large voltage swing conditions. The small-signal tuning range is approximately six, and punch through is reached at a bias voltage of -60 V, while the breakdown voltage is on the order of -160 V. An interdigitated layout is utilized together with a self-aligned Schottky anode etch process to improve the Q-factor at 2 GHz, which is 20 at zero bias and approximately 160 at punch through.

/pdf/a-sic-varactor-with-large-effective-tuning-range-for-hjj93gsrjp.pdf

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

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A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications