Composition and temperature dependence of electron band structure in ZnSe1−xSx

Based on the pseudopotential scheme, the hydrostatic pressure dependence of the electronic properties has been predicted for zinc-blende ZnS. The material of interest is found to exhibit features of both direct and indirect band-gap semiconductor depending on the applied pressure. Detailed plots of the valence charge distribution along the [1 1 1] direction and in the (1 1 0) plane at different pressures are also presented and discussed.

Zinc-blende ZnS under pressure: predicted electronic properties

The electronic structure of Ge, GaP and InP semiconductors under hydrostatic pressure based on the empirical pseudopotential method have been reported. The pressure coefficients, pressure dependent form factors, of the main band gaps at \( \underline{\Upgamma } ,\;\underline{\text{X}} \) and \( \underline{\text{L}} \) symmetry points in the Brillouin zone have been calculated. We have found that most of the values of the electronic energy bands were more sensitive to the pressure dependent form factors associated with the reciprocal lattice vectors of \( \left| {\Updelta \underline{\underline{{\mathbf{G}}}} } \right|^{2} = 11 \) than any other value. Our calculations for the energy gaps of the semiconductors under investigation at different pressures have been found to be in excellent agreement with available experimental data.

Pressure dependence of the electronic structure in Ge, GaP and InP semiconductors at room temperature

Ab initio study of pressure-induced electronic band structure transition in Ge50Sn50 ordered alloy

The variation of the direct and indirect band gaps of GaSb with pressure and temperature has been calculated using the adjacent empirical pseudopotential method. Our results for most of the gaps agree well with those of the experimental one. The contribution of the thermal expansion term to the temperature dependence of the gaps has been estimated and the results show that this effect is more important for the direct gap than the indirect one.

Electronic structure of GaSb under temperature and pressure effects

Pressure dependence of the electronic structure in germanium

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Pressure dependence of the electronic structure in germanium