Mo Zhang
University of Tennessee
14 Papers
193 Citations
Mo Zhang is an academic researcher from University of Tennessee. The author has contributed to research in topics: CMOS & Low voltage. The author has an hindex of 7, co-authored 14 publications. Previous affiliations of Mo Zhang include Marvell Technology Group.
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Papers
Low-Power Low-Voltage Current Readout Circuit for Inductively Powered Implant System
TL;DR: This paper demonstrates a low-power low-voltage sensor readout circuit which could be easily powered up with an inductive link and has potential applications in the monitoring of blood glucose level, lactate in the bloodstream, and pH or oxygen in a physiological system/environment.
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A bioreporter bioluminescent integrated circuit for very low-level chemical sensing in both gas and liquid environments
R. Vijayaraghavan,Syed K. Islam,Mo Zhang,Steven Ripp,S. Caylor,N.D. Bull,Scott Moser,S.C. Terry,Benjamin J. Blalock,Gary S. Sayler +9 more
TL;DR: A compact biosensor using genetically engineered whole-cell bioreporters on a CMOS based integrated circuit, also called the microluminometer, for accurately sensing low concentrations of a wide range of toxic substances in both gas and liquid environments is reported.
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Integrated Circuit Biosensors Using Living Whole-Cell Bioreporters
Syed K. Islam,R. Vijayaraghavan,Mo Zhang,Steven Ripp,S. Caylor,B. Weathers,Scott Moser,S.C. Terry,Benjamin J. Blalock,Gary S. Sayler +9 more
TL;DR: An integrated CMOS microluminometer realized in 0.35-mum CMOS process and optimized for the detection of low-level bioluminescence as part of the BBIC is presented.
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A low power sensor signal processing circuit for implantable biosensor applications
TL;DR: In this paper, a low power sensor read-out circuit is implemented in 0.35 µm CMOS technology that consumes only 400 µW of power and occupies an area of 0.66 mm2.
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An SOI-based High-Voltage, High-Temperature Gate-Driver for SiC FET
M.A. Huque,R. Vijayaraghavan,Mo Zhang,Benjamin J. Blalock,Leon M. Tolbert,Syed K. Islam +5 more
- 17 Jun 2007
TL;DR: In this article, a highvoltage and high-temperature gate-driver chip for SiC FET switches is designed and fabricated using 0.8-micron, 2-poly and 3-metal BCD on SOI process.