12 Papers
25 Citations
Mo Li is an academic researcher from China Academy of Engineering Physics. The author has contributed to research in topics: Molecular beam epitaxy & Quantum dot. The author has an hindex of 6, co-authored 12 publications. Previous affiliations of Mo Li include University of Electronic Science and Technology of China.
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Papers
Flexibly and Repeatedly Modulating Lasing Wavelengths in a Single Core–Shell Semiconductor Microrod
Hua Zong,Yue Yang,Chuang Ma,Xiaohui Feng,Tiantian Wei,Wei Yang,Junchao Li,Li Junze,Liping You,Jian Zhang,Mo Li,Caofeng Pan,Xiaodong Hu,Bo Shen +13 more
TL;DR: A structure that decouples the gain medium and optical cavity is proposed, where the corresponding mechanism for the lasing wavelength shift is explained, and one kind of wavelength continuously variable lasers is achieved on a single GaN/InGaN core-shell microrod without modifying the geometry of the resonant cavity or cutting the micRORod.
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Single-photon emission from isolated monolayer islands of InGaN
Xiaoxiao Sun,Ping Wang,Tao Wang,Ling Chen,Zhaoying Chen,Kang Gao,Tomoyuki Aoki,Mo Li,Jian Zhang,Tobias Schulz,Martin Albrecht,Weikun Ge,Yasuhiko Arakawa,Bo Shen,Mark J. Holmes,Xinqiang Wang +15 more
TL;DR: The researchers believe their InGaN system could have advantages including wide tunability of the emitted wavelength and compatibility with silicon substrates for manufacturing optoelectronic and power handling devices.
High-Mobility Two-Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy.
Tao Wang,Tao Wang,Xinqiang Wang,Zhaoying Chen,Xiaoxiao Sun,Ping Wang,Xiantong Zheng,Xin Rong,Liuyun Yang,Weiwei Guo,Ding Wang,Ding Wang,Jianpeng Cheng,Xi Lin,Peng Li,Jun Li,Xin He,Qiang Zhang,Mo Li,Jian Zhang,Xuelin Yang,Fujun Xu,Weikun Ge,Xixiang Zhang,Bo Shen +24 more
TL;DR: The experimental observations of 2DEG at the InGaN/InN heterointerface have paved the way for fabricating higher‐speed transistors based on an InN channel.
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Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods
Ping Wang,Xinqiang Wang,Tao Wang,Tao Wang,Chih Shan Tan,Bowen Sheng,Xiaoxiao Sun,Mo Li,Xin Rong,Xiantong Zheng,Zhaoying Chen,Xuelin Yang,Fujun Xu,Zhixin Qin,Jian Zhang,Xixiang Zhang,Bo Shen +16 more
TL;DR: In this article, the National Key Research and Development Program (NKDP), National Basic Research Program of China (NBP), National Natural Science Foundation (NNF), the Science Challenge Project (SCP), NSAF (Grant No. JCKY201621212A503), U1630109, CAEP Microsystem and THz Science and Technology Foundation (CAEPMT201507), and the Open Fund of the State Key Laboratory on Integrated Optoelectronics and King Abdullah University of Science & Technology.
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Effect of indium droplets on growth of InGaN film by molecular beam epitaxy
Xiantong Zheng,Hongwei Liang,Ping Wang,Xiaoxiao Sun,Zhaoying Chen,Tao Wang,Bowen Sheng,Yixin Wang,Ling Chen,Ding Wang,Xin Rong,Mo Li,Jian Zhang,Xinqiang Wang +13 more
TL;DR: In this paper, a qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate.
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