We report temperature-dependent time-integrated and time-resolved photoluminescence (PL) studies of InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition. We observed anomalous emission behavior, specifically an S-shaped (decrease–increase–decrease) temperature dependence of the peak energy (Ep) for InGaN-related PL with increasing temperature: Ep redshifts in the temperature range of 10–70 K, blueshifts for 70–150 K, and redshifts again for 150–300 K with increasing temperature. In addition, when Ep redshifts, the spectral width is observed to narrow, while when Ep blueshifts, it broadens. From a study of the integrated PL intensity as a function of temperature, it is found that thermionic emission of photocarriers out of local potential minima into higher energy states within the wells is the dominant mechanism leading to the thermal quenching of the InGaN-related PL. We demonstrate that the temperature-induced S-shaped PL shift is caused by a change in the carrier dyna...

“S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

We have systematically studied the influence of Si doping on the characteristics of InGaN/GaN multiple quantum wells (MQWs) by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), and time-resolved PL spectroscopy. The twelve- period MQWs were grown by metalorganic chemical vapor deposition. Si doping in the GaN barriers was varied from 1×1017 to 3×1019 cm−3. Information on the structural quality of the MQWs as a function of Si doping was extracted from the linewidth broadening of the higher-order superlattice satellite peaks measured in HRXRD. The HRXRD measurements indicate that increased Si doping results in better interface properties of the MQWs. PL and PLE measurements show a decrease in the Stokes shift with increasing Si doping concentration. The 10 K radiative recombination lifetime was observed to decrease from ∼30 ns (for n<1×1017 cm−3) to ∼4 ns (for n=3×1019 cm−3) with increasing Si doping concentration. The reduced Stokes shift, the decrease in radi...

Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells

Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation photon energy (Eexc) to further understand the origin of SE in these structures. Optically pumped SE was observed for excitation photon energies well below that of the absorption edge of the MQWs, indicating the states responsible for the soft absorption edge in these structures can efficiently couple carriers with the gain region. “Mobility edge”-type behavior in the SE peak was observed as Eexc was varied. The effective mobility edge measured in these SE experiments lies ∼110 meV above the main spontaneous emission peak and ∼62 meV above the SE peak. Tuning the excitation energy below the mobility edge was found to be accompanied by a drastic increase in the SE threshold due to a decrease in the effective absorption cross section. The experimental results indicate that the SE peak observed here has the same micr...

Energy selective optically pumped stimulated emission from InGaN/GaN multiple quantum wells

We report the structural properties of InGaN/GaN/AlGaN multiple quantum wells (MQWs) by means of two-dimensional reciprocal space mapping (RSM) of high resolution x-ray diffraction. The influence of Si doping in GaN barriers on the characteristics has been studied for 12-period MQWs grown by metalorganic chemical vapor deposition, which have different Si doping concentrations in the GaN barriers ranging from 1×1017 to 3×1019 cm−3. Information on the structural quality of these MQWs was extracted from the linewidth broadening of the higher-order superlattice satellite peaks, as well as from the presence of Pendellosung oscillations. The measured diffraction curves were modeled using kinematic diffraction theory. From the symmetric and asymmetric RSMs around (0002), (0004) and (1124) reflections, we found that the InGaN/GaN/AlGaN MQWs are grown coherently on the GaN base layer. Better interface properties are achieved with Si doping. Our results indicate that Si doping in the GaN barriers affects the inter...

High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells

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MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells