Environment friendly chemical mechanical polishing of copper

Molecular separations that enable selective transport of target molecules from gas and liquid molecular mixtures, such as CO2 capture, olefin/paraffin separations, and organic solvent nanofiltration, represent the most energy sensitive and significant demands. Membranes are favored for molecular separations owing to the advantages of energy efficiency, simplicity, scalability, and small environmental footprint. A number of emerging microporous organic materials have displayed great potential as building blocks of molecular separation membranes, which not only integrate the rigid, engineered pore structures and desirable stability of inorganic molecular sieve membranes, but also exhibit a high degree of freedom to create chemically rich combinations/sequences. To gain a deep insight into the intrinsic connections and characteristics of these microporous organic material-based membranes, in this review, for the first time, we propose the concept of organic molecular sieve membranes (OMSMs) with a focus on the precise construction of membrane structures and efficient intensification of membrane processes. The platform chemistries, designing principles, and assembly methods for the precise construction of OMSMs are elaborated. Conventional mass transport mechanisms are analyzed based on the interactions between OMSMs and penetrate(s). Particularly, the 'STEM' guidelines of OMSMs are highlighted to guide the precise construction of OMSM structures and efficient intensification of OMSM processes. Emerging mass transport mechanisms are elucidated inspired by the phenomena and principles of the mass transport processes in the biological realm. The representative applications of OMSMs in gas and liquid molecular mixture separations are highlighted. The major challenges and brief perspectives for the fundamental science and practical applications of OMSMs are tentatively identified.

Organic molecular sieve membranes for chemical separations.

Chemical mechanical polishing (CMP) is an essential semiconductor manufacturing process because of its local and global planarization ability in fabricating highly integrated devices. The CMP process uses both chemical reaction and mechanical polishing simultaneously. The combination of chemical reaction and mechanical removal in CMP is so complex that understanding the material removal mechanism has been a challenge for researchers and engineers. The chemical reaction mechanism is determined by the chemical composition of the CMP slurry and the material property of the target material. However, the mechanical action is a complex result of various mechanical factors of the process parameters and consumables. The mechanical material removal is a cornerstone of understanding and predicting CMP results. This review focuses on the mechanical aspects in CMP in terms of the process parameters and consumables of the CMP process that directly influence the material removal characteristics.

Mechanical Aspects of the Chemical Mechanical Polishing Process: A Review

Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Chemical mechanical planarization (CMP) is a wet polishing technique employed to smooth the surface of various materials using a combination of chemical and mechanical forces to achieve finer and longer lines on semiconductor devices. Among the published papers related to CMP, the CMP metal slurry has been the primary focus, and it appears to be the main driver to improve the CMP performance and quality for next-generation devices. Slurry can affect the removal rate, uniformity, defects, and selectivity between the metal and the barrier layer. The material-removal mechanism of metal CMP is determined by the chemical reaction due to chemical solutions compared to the mechanical action, which is due to the abrasiveness of the slurry. We verify that for each user, a chemical knowledge of slurry is required to obtain preferred results. The basic chemical factors of metal CMP slurry are oxidizers, chelating agents, and corrosion inhibitors. This review focuses on the role and effectiveness of each chemical solution by considering the electrochemical characteristics. It will assist in determining the most appropriate solution to further the development of new slurry for next-generation metal CMP.

Slurry components in metal chemical mechanical planarization (CMP) process: A review

The demand for pattern miniaturization on package substrates has been steadily increasing. One technical innovation for the package substrate manufacturing process was chemical mechanical planarization (CMP). In conventional wiring, it was possible to remove extraneous copper through only the etching process. However, etching defects occur with narrower line widths. As the package substrate has a Cu hybrid structure through Cu plating and copper clad laminate (CCL) removal, it is necessary to apply the CMP to remove excess copper. However, defects are generated by the CMP process due to mechanical and chemical effects from the slurry. This study investigated the surfactant effect on Cu dishing and erosion in patterns with approximately 10/10 µm line width and spacing. The conventional Cu slurry without a surfactant had severe erosion (0.58 µm) in Cu patterns of 4/6 µm and deep dishing (4.2 µm) in Cu patterns of 14/16 µm. However, the experimental results showed that the friction force during CMP decreased, with smaller dishing and erosion as surfactant concentration increased. Finally, globally planarized Cu patterns were realized with an erosion range of 0.22 µm to 0.35 µm and a dishing range of 0.37 µm to 0.69 µm with 3 wt.% surfactant.

/pdf/effect-of-surfactant-on-package-substrate-in-chemical-3vovzmbvpi.pdf

Effect of surfactant on package substrate in chemical mechanical planarization

Chemical mechanical polishing (CMP) is currently replacing a conventional chemical etching or mechanical polishing to remove overburdened copper deposit in printed circuit board (PCB) manufacturing process owing to its ability to realize a global planarization. In order to stabilize the CMP as one of the PCB manufacturing processes, the CMP machine has been investigated. This paper introduces a newly developed Oscar-type CMP machine and copper CMP process to polish rectangular PCB with a size up to 510 mm by 510 mm, especially focused on the effect of platen coolant temperature on removal rate and removal uniformity during copper CMP to reduce the amount of slurry consumed. The CMP experiments are implemented under the coolant temperatures of 10, 15, 20, 25 and 30°C, and the slurry flow of 600, 800, 1000 and 1200 mL/min. The experimental results show that the removal rate goes up with an increase in the platen coolant temperature during polishing at a fixed slurry flow rate, and the removal rate goes down at any fixed the platen coolant temperature when the slurry flow rate increases. It means that the reduction of thermochemical reaction rate in the chemical mechanical removal, resulting from cooling down of the copper surface when the.

/pdf/development-of-green-cmp-by-slurry-reduction-through-33i420hegk.pdf

Development of green CMP by slurry reduction through controlling platen coolant temperature

Chemical mechanical polishing (CMP) technology has been newly applied in printed circuit board (PCB) field for satisfying requirements from miniaturization of mobile devices. This paper focuses on the complexing agent to increase the removal rate for thick Cu layer. In order to find out optimum type and concentration of the complexing agent, experiments have been done in terms of electrochemical analysis, surface roughness and removal rate. As concentration of complexing agent (glycine) in slurry increased, it was confirmed that corrosion current density increased in potentio-dynamic curve since it promoted production of new Cu ion by decreasing amount of Cu ion of chemical reaction layer. Finally, it was possible to confirm that chemical reaction had a direct correlation with removal rate through CMP evaluation.

Effect of glycine on copper CMP

/pdf/effect-of-surfactant-on-package-substrate-in-chemical-1ndqi0mq0s.pdf

Effect of Surfactant on Package Substrate in Chemical

Surface Activation by Electrolytically Ionized Slurry during Cu CMP

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