Mingyang Gu
Tsinghua University
7 Papers
1 Citations
Mingyang Gu is an academic researcher from Tsinghua University. The author has contributed to research in topics: Computer science & Catalysis. The author has an hindex of 2, co-authored 5 publications.
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Papers
One-Shot Refresh: A Low-Power Low-Congestion Approach for Dynamic Memories
Hongtao Zhong,Mingyang Gu,Yu Wang,Yongpan Liu,Vijaykrishnan Narayanan,Huazhong Yang,Xueqing Li +6 more
TL;DR: It is shown that a few devices could be used to update existing designs to gain the OSR capability, and the time window accessible for regular read and write operations is widened with less disruption by the refresh traffic.
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Improved activity and stability for chlorobenzene oxidation over ternary Cu-Mn–O-Ce solid solution supported on cordierite
Mingyang Gu,Qiong Huang,Lirui Xu,Jie Zhu,Yueyin Sun,Tao Tao,Bo Yang,Mindong Chen,Huanming Yang +8 more
TL;DR: In this paper , a series of CuMnOx/CeO2/cordierite catalysts were investigated for the performance of chlorobenzene (CB) oxidation, and the effects of the molar ratio of Mn/Cu, transition metal oxide loading, calcination temperature and time were investigated as the main investigation factor for their performance.
Design of almost-nonvolatile embedded DRAM using nanoelectromechanical relay devices
Hongtao Zhong,Mingyang Gu,Juejian Wu,Huazhong Yang,Xueqing Li +4 more
- 09 Mar 2020
TL;DR: It is revealed that the tunable beyond-CMOS characteristics of emerging NEM relay devices, especially the ultra-high OFF-state drain-source resistance, open up new opportunities with device-circuit co-design.
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Enabling New Computing Paradigms with Emerging Symmetric-Access Memories
Juejian Wu,Mingyang Gu,Hongtao Zhong,Tao Yunsong,Fei Qiao,Huazhong Yang,Xueqing Li +6 more
- 17 Jul 2019
TL;DR: 2T1R is proposed, a new symmetric memory circuit design based on two-terminal resistive devices, such as RRAM and MTJ, that exhibits improved leakage power and scaling capability, as compared with the existing RRAM-based crossbar symmetricmemory design.
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