Ming Wen Ma
National Chiao Tung University
14 Papers
101 Citations
Ming Wen Ma is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Dielectric & Gate dielectric. The author has an hindex of 6, co-authored 14 publications.
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Papers
Carrier Transportation Mechanism of the $\hbox{TaN}/ \hbox{HfO}_{2}/\hbox{IL}/\hbox{Si}$ Structure With Silicon Surface Fluorine Implantation
Woei Cherng Wu,Chao-Sung Lai,Tzu-Ming Wang,Jer-Chyi Wang,Chih-Wei Hsu,Ming Wen Ma,Wen-Cheng Lo,Tien-Sheng Chao +7 more
TL;DR: In this article, the current transport mechanism of HfO2 gate dielectrics with a TaN metal gate and silicon surface fluorine implantation is investigated based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K.
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High-Performance HfO2 Gate Dielectrics Fluorinated by Postdeposition CF4 Plasma Treatment
TL;DR: Wu et al. as mentioned in this paper proposed a high-performance HfO2 gate dielectrics fluorinated by postdeposition CF4 plasminization for the Taiwan Nanya Technology Corporation.
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•Journal Article
High-performance HfO2 gate dielectries fluorinated by postdeposition CF4 plasma treatment
TL;DR: In this paper, the gate leakage current, breakdown voltage, capacitance-voltage hysteresis, and charge trapping characteristics of fluorinated HfO 2 gate dielectrics were investigated.
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Nonvolatile Memory Characteristics with Embedded Hemispherical Silicon Nanocrystals
Jian Hao Chen,Tan Fu Lei,Dolf Landheer,Xiaohua Wu,Ming Wen Ma,Woei Cherng Wu,Tsung Yu Yang,Tien-Sheng Chao +7 more
TL;DR: In this article, the thermal agglomeration of an ultrathin (1.5-1.8 nm) amorphous silicon (a-Si) film was used for the fabrication of nonvolatile memories.
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Current Transport Mechanism for HfO2 Gate Dielectrics with Fluorine Incorporation
Woei Cherng Wu,Chao-Sung Lai,Tzu-Ming Wang,Jer-Chyi Wang,Chih-Wei Hsu,Ming Wen Ma,Tien-Sheng Chao +6 more
TL;DR: In this paper, the current transport mechanism of fluorinated HfO 2 gate dielectrics is investigated based on the experimental results of the temperature dependence of gate leakage current and Fowler-Nordheim tunneling characteristics at 77 K.
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