Ming Su
University of South Carolina
5 Papers
46 Citations
Ming Su is an academic researcher from University of South Carolina. The author has contributed to research in topics: Epitaxy & Aspect ratio. The author has an hindex of 5, co-authored 5 publications.
Chat about Author
Papers
GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices
Wenhong Sun,Jinwei Yang,Changqing Chen,J. P. Zhang,M. E. Gaevski,E. Kuokstis,Vinod Adivarahan,Heyun Wang,Zheng Gong,Ming Su,M. Asif Khan +10 more
TL;DR: In this article, the growth of GaN/Al 0.20Ga0.8N multiple quantum wells (MQWs) on selective-area-grown a-plane GaN pillars over r-plane sapphire was investigated.
48
n‐Al0.75Ga0.25N epilayers for 250 nm emission ultraviolet light emitting diodes
Wenhong Sun,Jinwei Yang,Jianping Zhang,M. Gaevski,C. Q. Chen,Jingsong Li,Zheng Gong,Ming Su,M. Asif Khan +8 more
TL;DR: In this article, a unique approach combining migrationenhanced metalorganic chemical vapor deposition (MEMOCVD) high temperature AlN buffer layers and AlGaN/AlN superlattices (SLs) was developed to yield high quality (HQ) Al-GaN layers for 250 nm LEDs.
5
A new selective area lateral epitaxy approach for depositing a-plane GaN over r-plane sapphire
Changqing Chen,Jianping Zhang,Jinwei Yang,Vinod Adivarahan,S. Rai,Shuai Wu,H. M. Wang,Wenhong Sun,Ming Su,Zheng Gong,E. Kuokstis,M. E. Gaevski,Muhammad Asif Khan +12 more
TL;DR: In this article, a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire was proposed, which combines selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-planar GaN pillars and lateral epitaxy from their c-plane facets.
Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire
H. M. Wang,Changqing Chen,Zheng Gong,Jianping Zhang,Mikhail Gaevski,Ming Su,Jinwei Yang,M. Asif Khan +7 more
TL;DR: In this article, a-plane GaN templates and coalesced epitaxial lateral overgrown (ELOG) films on r-plane sapphire substrates were investigated by x-ray diffraction (XRD).
Lateral Epitaxial Overgrowth of Fully Coalesced A-Plane GaN on R-Plane Sapphire
Changqing Chen,Jinwei Yang,H. M. Wang,Jianping Zhang,Vinod Adivarahan,M. E. Gaevski,Edmundas Kuokstis,Zheng Gong,Ming Su,Muhammad Asif Khan +9 more
TL;DR: Fully coalesced epitaxial laterally overgrown a-plane GaN films were characterized for their structural and optical quality as mentioned in this paper, and they exhibited a wing tilt of only 0.27? and optically pumped stimulated emission.