Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production. 

/pdf/prospects-and-applications-of-on-chip-lasers-1xwe1uu6.pdf

Prospects and applications of on-chip lasers

Whispering-gallery-mode microcavity lasers possess remarkable characteristics such as high Q factors and compact geometries, making them an essential element in the evolution of microlasers. However, solid-state whispering-gallery-mode lasers have previously suffered from low output power and limited optical conversion efficiency, hindering their applications. Here, we present the achievement of milliwatt laser emissions at a wavelength of 1.06 µm from a solid-state whispering-gallery-mode laser. To accomplish this, we construct a whispering-gallery-mode microcavity (with a diameter of 30 µm) using a crystalline Nd: YAG thin film obtained through carbon-implantation enhanced etching of a Nd: YAG crystal. This microcavity laser demonstrates a maximum output power of 1.12 mW and an optical conversion efficiency of 12.4%. Moreover, our unique eccentric microcavity design enables efficient coupling of free-space pump light, facilitating integration with a waveguide. This integration allowed for single-wavelength laser emission from the waveguide, achieving an output power of 0.5 mW and an optical conversion efficiency of 6.18%. Our work opens up new possibilities for advancing solid-state whispering-gallery-mode lasers, providing a viable option for compact photonic sources. 

Optically pumped Milliwatt Whispering-Gallery microcavity laser.

A full integration of miniaturized transparent energy device (lithium-ion battery), electronic device (thin-film transistor) and sensing device (photodetector) to form a monolithic integrated microsystem greatly enhances the functions of transparent electronics. Here, InGaZnO is explored to prepare the above devices and microsystem due to its multifunctional properties. A transparent lithium-ion battery with InGaZnO as anode (capacity~9.8 μAh cm-2) is proposed as the on-chip power source. Then, thin-film transistor with InGaZnO as channel (mobility~23.3 cm2 V-1 s-1) and photodetector with InGaZnO as photosensitive layer (responsivity~0.35 A W-1) are also prepared on the substrate for constructing an fully integrated transparent microsystem. Each device displays acceptable performance. Moreover, alternating-current signals can be successfully charged into the lithium-ion battery by using the thin-film transistor as the on-chip rectifier and also the photodetector works well by using the charged battery as the on-chip power, demonstrating collaborative capabilities of each device to achieve systematic functions. 

Integration of microbattery with thin-film electronics for constructing an integrated transparent microsystem based on InGaZnO.

We report for the first time the direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane photonic integration. O-band lasers with five QD layers were grown with molecular beam epitaxy (MBE) in a 300 mm reactor and then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting lasers are demonstrated with high yield and reliable results ready for commercialization and scaled production, and efforts to make monolithically integrated lasing cavities grown on silicon-on-insulator (SOI) wafers vertically aligned and coupled to SiN waveguides on the same chip show the potential for 300 mm-scale Si photonic integration with in-pocket direct MBE growth.

https://www.mdpi.com/2304-6732/10/5/534/pdf?version=1683356324

Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket

Abstract The rapid development of emerging technologies observed in recent years, such as artificial intelligence, machine learning, mobile internet, big data, cloud computing, and the Internet of Everything, are generating escalating demands for expanding the capacity density, and speed in next‐generation optical communications. This poses a significant challenge to existing communication techniques. Within this context, the integration of near‐infrared broadband, tunable, and high‐gain luminescent materials into silicon optical circuits or fiber architectures to transmit and modulate light shows enormous potential for advancing next‐generation communication techniques. Here, this review provides an overview of the recent breakthroughs in near‐infrared luminescent epitaxial/colloidal quantum dots, and metal‐active‐center‐doped materials for broadband optical amplifiers and tunable lasers. We also expound on efforts to enhance the bandwidth and gain of these materials‐based amplifiers and lasers, exploring the challenges associate with developing ultra‐broadband and high‐speed optical communication systems. Additionally, the potential applications in Fifth Generation Fixed Networks, integration with 5G and 6G wireless networks, compensation for current Si electronic based CMOS for high computing capability, and the prospects of these light sources for next‐generation optoelectronic devices are discussed. image 

Emerging near‐infrared luminescent materials for next‐generation broadband optical communications

Abstract Silicon photonic integration has gained great success in many application fields owing to the excellent optical device properties and complementary metal-oxide semiconductor (CMOS) compatibility. Realizing monolithic integration of III-V lasers and silicon photonic components on single silicon wafer is recognized as a long-standing obstacle for ultra-dense photonic integration, which can provide considerable economical, energy-efficient and foundry-scalable on-chip light sources, that has not been reported yet. Here, we demonstrate embedded InAs/GaAs quantum dot (QD) lasers directly grown on trenched silicon-on-insulator (SOI) substrate, enabling monolithic integration with butt-coupled silicon waveguides. By utilizing the patterned grating structures inside pre-defined SOI trenches and unique epitaxial method via hybrid molecular beam epitaxy (MBE), high-performance embedded InAs QD lasers with monolithically out-coupled silicon waveguide are achieved on such template. By resolving the epitaxy and fabrication challenges in such monolithic integrated architecture, embedded III-V lasers on SOI with continuous-wave lasing up to 85 °C are obtained. The maximum output power of 6.8 mW can be measured from the end tip of the butt-coupled silicon waveguides, with estimated coupling efficiency of approximately -6.7 dB. The results presented here provide a scalable and low-cost epitaxial method for the realization of on-chip light sources directly coupling to the silicon photonic components for future high-density photonic integration. 

/pdf/monolithic-integration-of-embedded-iii-v-lasers-on-soi-1ev4s97e.pdf

Monolithic integration of embedded III-V lasers on SOI

The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Ge/Si nanowires are predicted to be a promising platform for spin and even topological qubits. While for large-scale integration of these devices, nanowires with fully controlled positions and arrangements are a prerequisite. Here, we have reported ordered Ge hut wires by multilayer heteroepitaxy on patterned Si (001) substrates. Self-assembled GeSi hut wire arrays are orderly grown inside patterned trenches with post growth surface flatness. Such embedded GeSi wires induce tensile strain on the Si surface, which results in preferential nucleation of Ge nanostructures. Ordered Ge nano-dashes, disconnected wires and continuous wires are obtained correspondingly by tuning the growth conditions. These site-controlled Ge nanowires on a flattened surface lead to the ease of fabrication and large-scale integration of nanowire quantum devices.

Strain-induced ordered Ge(Si) hut wires on patterned Si (001) substrates.

We integrated InAs QD lasers on trenched SOI platforms, enabling monolithic integration with butt-coupled waveguides. We have achieved high-performance lasers with a maximum output power of 6.8 mW and a coupling efficiency of -6.7 dB.

Monolithic Integration of III-V Quantum Dot Lasers on SOI

Scalable and Tunable In-Plane Ge/Si(001) Nanowires Grown by Molecular Beam Epitaxy.

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