This article reviews the current status of spin dynamics in semiconductors which has achieved a lot of progress in the past years due to the fast growing field of semiconductor spintronics. The primary focus is the theoretical and experimental developments of spin relaxation and dephasing in both spin precession in time domain and spin diffusion and transport in spacial domain. A fully microscopic many-body investigation on spin dynamics based on the kinetic spin Bloch equation approach is reviewed comprehensively.

Spin dynamics in semiconductors

The paper reviews the interplay of Rashba/Dresselhaus spin splittings in various two-dimensional systems made of zinc-blende III–V, wurtzite, and SiGe semiconductors. We discuss the symmetry aspects of the linear and cubic in electron wavevector spin splitting in heterostructures prepared on (001)-, (110)-, (111)-, (113)-, (112)-, and (013)- oriented substrates and address the requirements for suppression of spin relaxation and realization of the persistent spin helix state. In experimental part of the paper, we overview experimental results on the interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy: The method based on the phenomenological equivalence of the linear-in-wavevector spin splitting and several photogalvanic phenomena.

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201350261

Interplay of Rashba/Dresselhaus spin splittings probed by photogalvanic spectroscopy –A review

The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains A theoretical work has also been developed to understand the observed strain-induced spin polarization Our result paves an alternative way for the generation of spin polarized current

https://arxiv.org/pdf/cond-mat/0702583.pdf

Current and strain-induced spin polarization in InGaN/GaN superlattices.

Experimental results from submicrometer devices in III-V nitride devices often exhibit a significant decrease in the transconductance when gate bias is increased. This creates new challenges for circuit design in III-V nitride technology. In this paper, we discuss possible sources of this collapse from a theoretical and computational standpoint. We find that polar optical phonon emission related velocity-field nonlinearities in 5-40 kV/cm region are the primary reason for the decrease in the transconductance. We also discuss possible solutions to this problem and examine the practicality of each solution. Shorter S/G spacing and higher doping in the source gate region are predicted to remove much of the transconductance collapse.

Sources of transconductance collapse in III-V nitrides - consequences of velocity-field relations and source/gate design

We have investigated the low-temperature transport properties of front-gated Al0.18Ga0.82N/GaN heterostructures. At zero gate voltage, the Hall mobility increases with decreasing temperature (20 K⩽T⩽190 K) due to a reduction in phonon scattering. For T⩽20 K, the mobility decreases with decreasing temperature. This is due to weak localization in a weakly disordered two-dimensional system. By changing the applied gate voltage, we can vary the carrier density n from 3.11×1012 to 6.95×1012 cm−2 in our system. The carrier density shows a linear dependence on the applied gate voltage, consistent with a simple parallel-plate capacitor model. The average distance between the GaN electron system and the AlGaN/GaN interface is estimated to be 240 A. At high carrier densities (n>4.65×1012 cm−2), the measured mobility (μ) is found to be a decreasing function of carrier density as μ∼n−0.31. Loss of mobility with increasing carrier density is dominated by interface roughness scattering. At low carrier densities (n<4.24...

Transport in a gated Al0.18Ga0.82N/GaN electron system

We report the drastic enhancement of Shubnikov-de Haas (SdH) oscillations observed in a GaN/AlGaN heterostructure by microwave modulation. The dependence of the SdH pattern on microwave power and temperature are investigated. The underlying mechanism is attributed to the effect of carrier heating. This technique has the advantage of keeping the carrier concentration fixed and not requiring expensive high-energy laser facilities compared with carrier-modulated SdH measurements. Moreover, we have investigated the low-temperature transport properties of front-gated Al 0 . 1 8 Ga 0 . 8 2 N/GaN heterostructures. By changing the applied gate voltage, we can vary the carrier density in our sample. At high carrier densities (n > 4.65 x 10 1 2 cm - 2 ), the measured mobility (μ) is found to be a decreasing function of carrier density as μ∼n - 0 . 3 1 . Loss of mobility with increasing carrier density is dominated by interface roughness scattering. At low carrier densities (n < 4.24 x 10 1 2 cm - 2 ), the measured mobility is found to be an increasing function of carrier density as μ∼n 0 . 3 4 . This is consistent with remote ionized impurity scattering, although the measured exponent 0.34 is smaller than the typical value (0.7-1.5) observed in an AlGaN/GaN electron system. A possible reason is that our sample mobility is approximately five times lower than those in other devices for a similar electron density.

Conventional and microwave-modulated Shubnikov–de Haas oscillations in GaN electron systems

Low-temperature magnetotransport measurements were performed on AlxGa1−xN∕GaN two-dimensional electron systems. By studying the beating pattern in the Shubnikov–de Haas oscillations in a perpendicular magnetic field, we are able to measure the zero-field spin-splitting energies in our systems. Our experimental results demonstrate that the Rashba term due to structural inversion asymmetry is the dominant mechanism which gives rise to the measured zero-field spin splitting in our wurzite AlGaN∕GaN structures. By utilizing the persistent photoconductivity (PPC) effect, we are able to increase the carrier density n in our AlGaN∕GaN two-dimensional electron system. It is found that the Rashba spin-orbit splitting parameter α decreases with increasing n. We suggest that the formation of long-lived electron-hole pairs induced by the PPC effect decreases the large electric field near the AlGaN∕GaN interface, causing α to decrease with increasing n.

Zero-field spin splitting in modulation-doped AlxGa1−xN∕GaN two-dimensional electron systems

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Papers

Transport in a gated Al0.18Ga0.82N/GaN electron system

Conventional and microwave-modulated Shubnikov–de Haas oscillations in GaN electron systems

Zero-field spin splitting in modulation-doped AlxGa1−xN∕GaN two-dimensional electron systems