Silicon photonics is advancing rapidly in performance and capability with multiple fabrication facilities and foundries having advanced passive and active devices, including modulators, photodetectors, and lasers. Integration of photonics with electronics has been key to increasing the speed and aggregate bandwidth of silicon photonics based assemblies, with multiple approaches to achieving transceivers with capacities of 1.6 Tbps and higher. Progress in electronics has been rapid as well, with state-of-the-art chips including switches having many tens of billions of transistors. However, the electronic system performance is often limited by the input/output (I/O) and the power required to drive connections at a speed of tens of Gbps. Fortunately, the convergence of progress in silicon photonics and electronics means that co-packaged silicon photonics and electronics enable the continued progress of both fields and propel further innovation in both.

Perspective on the future of silicon photonics and electronics

High- and ultrahigh-Q whispering-gallery mode resonators have the capability to trap photons by total internal reflection for a duration ranging from nanoseconds to milliseconds. These exceptionally long photon lifetimes enhance the light–matter interactions at all scales, namely at the electronic, molecular, and lattice levels. As a consequence, nonlinear photon scattering can be triggered with very low threshold powers, down to a few microwatts. The possibility to efficiently harness photon–photon interactions with a system optimizing size, weight, power, and cost constraints has created a new, quickly thriving research area in photonics science and technology. This topic is inherently cross-disciplinary, as it stands at the intersection of nonlinear and quantum optics, crystallography, optoelectronics, and microwave photonics. From a fundamental perspective, high-Q whispering-gallery mode resonators have emerged as an ideal platform to investigate light–matter interactions in nonlinear bulk materials. From an applied viewpoint, technological applications include time-metrology, aerospace engineering, coherent optical fiber communications, or nonclassical light generation, among others. The aim of this paper is to provide an overview of the most recent advances in this area, which is increasingly gaining importance in contemporary photonics.

Nonlinear photonics with high-Q whispering-gallery-mode resonators

Integrated microwave photonic filters (IMPFs) are capable of offering unparalleled performances in terms of superb spectral fineness, broadband, and more importantly, the reconfigurability, which encounter the trend of the next-generation wireless communication. However, to achieve high reconfigurability, previous works should adopt complicated system structures and modulation formats, which put great pressure on power consumption and controlment, and, therefore, impede the massive deployment of IMPF. Here, we propose a streamlined architecture for a wideband and highly reconfigurable IMPF on the silicon photonics platform. For various practical filter responses, to avoid complex auxiliary devices and bias drift problems, a phase-modulated flexible sideband cancellation method is employed based on the intensity-consistent single-stage-adjustable cascaded-microring (ICSSA-CM). The IMPF exhibits an operation band extending to millimeter-wave (≥30 GHz ), and other extraordinary performances including high spectral resolution of 220 MHz and large rejection ratio of 60 dB are obtained. Moreover, Gb/s-level RF wireless communications are demonstrated for the first time towards real-world scenarios. The proposed IMPF provides broadband flexible spectrum control capabilities, showing great potential in the next-generation wireless communication. 

Highly reconfigurable silicon integrated microwave photonic filter towards next-generation wireless communication

Aluminum scandium nitride (AlScN) has attracted extensive attention for its excellent piezoelectric properties in the micro‐electromechanical system applications. In this work, AlScN is demonstrated to be a promising candidate for on‐chip acousto‐optic coupling interactions with outstanding piezoelectric properties as well. Based on piezoelectric Al0.6Sc0.4N film deposited on silicon‐on‐insulator platform, the proposed devices exhibit impressive acousto‐optic coupling performances over a short interaction length of 210 µm with surface acoustic waves actuated by interdigital transducers. Meanwhile, the acousto‐optic coupling performances are further improved in a compact spiral waveguide with eight interaction segments, where the measured modulation efficiency is enhanced from −21.5 to −12.5 dB and the radiofrequency (RF) 3‐dB bandwidth is narrowed from 4 to 3.1 MHz at central frequency of 3.044 GHz with RF drive power of 18.6 dBm. The measured modulation efficiency is proportional to the incident RF drive power, depicting a linear increasing trend with a slope of one as the RF power increases up to 24.6 dBm. Such acousto‐optic devices are capable of achieving broadband acousto‐optic modulation and narrow‐band microwave photonic filtering. Besides, the designed device structure provides a prospect in single‐sideband modulation, acousto‐optic frequency shift, and nonreciprocal light propagation.

Acousto‐Optic Modulation in Silicon Waveguides Based on Piezoelectric Aluminum Scandium Nitride Film

Silicon photonics in the near-IR, up to 1.6 µm, is already one of key technologies in optical data communications, particularly short range. It also is being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with a large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the wavelength range of 2–5 µm, environmental sensing, life sensing and security, all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, eventually modulators, and most important an efficient and integrated light sources. This chapter reviews the recent developments of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including bandstructure modelling, material growth and processing techniques.

Lasing in Group-IV Materials

Demonstration of Forward Brillouin Gain in a Hybrid Photonic–Phononic Silicon Waveguide

We propose and demonstrate a notch filter on a silicon chip and apply it to a photonic microwave frequency measurement system with high precision and adjustable wide measurement range. The on-chip notch filter is implemented by embedding a serially coupled double microring resonator in a Fabry-Perot cavity consisting of two circular Bragg gratings with high reflectivity. The notch filtering with high quality factor and high rejection ratio is obtained by reconstructing the power transmission spectrum of the double microring resonator through the coherent interference within the Fabry-Perot cavity. The proposed notch filter is fabricated on a silicon-on-insulator wafer and the rejection ratio of the notch filter is measured to be 33.54 dB and the quality factor is 3.93×104. Based on the notch filter, a photonic microwave frequency measurement system is presented where the unknown radio frequency signal is detected by the variation of the output optical power from the notch filter through sweeping reference frequency. The measurement bandwidth of the system can be flexibly adjusted by tuning the output wavelength of the laser source. Broad measurement range of 0-26.62 GHz with a low error of ±0.25 GHz are obtained in a proof-of-concept experiment.

Demonstration of Photonic-Assisted Microwave Frequency Measurement Using a Notch Filter on Silicon Chip

We demonstrate the forward stimulated Brillouin scattering (FSBS) in a partly suspended silicon nanowire racetrack resonator. To realize the tight confinement of the transverse acoustic modes in the nanoscale silicon core, the racetrack resonator is supported by the tiny pillar. The Brillouin amplification of 2.25 dB is achieved with the resonator radius of 100 μm under a low-power pump laser of 8 mW. The influences of the waveguide width and the top width of the tiny pillar on the Brillouin frequency shift and Brillouin gain are presented and analyzed. The Brillouin frequency shift is conveniently manipulated by the changes in waveguide widths. Our proposed approach furnishes an alternative towards harnessing FSBS in integrated photonic circuits.

Demonstration of highly efficient forward stimulated Brillouin scattering in partly suspended silicon nanowire racetrack resonators

/pdf/asymmetric-ge-sige-coupled-quantum-well-modulators-4ohgzw91t4.pdf

Asymmetric Ge/SiGe coupled quantum well modulators

We design a partially suspended silicon nitride (Si3N4) slot waveguide on silica to realize efficient on-chip forward stimulated Brillouin scattering (FSBS). The slot waveguide can intensify radiation pressure close to the slot and simultaneously confine both optical and acoustic modes, resulting in an enhanced FSBS gain on the order of 300 W−1m−1. The acoustic radiation loss is significantly suppressed due to the strong acoustic coupling in the narrow slot waveguides. We analyze the impacts of structural parameters on the SBS properties, which produces the optimal parameters for maximum SBS gain. Based on the nonlinear coupled-mode equations, we compare the performance of Stokes amplification between the Si3N4 slot waveguides and the silicon nanowires. Simulation results indicate that the Si3N4 slot waveguides with low linear loss can offer a larger net Stokes amplification than silicon waveguides under moderate pump power. Such approach enables efficient on-chip SBS devices in CMOS-compatible Si3N4 platform.

/pdf/design-of-partially-suspended-silicon-nitride-slot-1p5we0u0zm.pdf

Design of Partially Suspended Silicon Nitride Slot Waveguides for Efficient Forward Stimulated Brillouin Scattering

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