A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

Method and system for diffusion and implantation in gallium nitride based devices

The present application is directed a computer-implemented method for for managing traffic in a network. The method includes a step of receiving, from a user on the network, a request to access the internet. The method also includes a step of determining information of the user based upon the request. The information includes a security privilege of the user in the network. The method also includes a step of reviewing selection criteria of plural, dynamic, virtual private network (VPN) cloud servers in the network. The method also includes a step of matching the determined information of the user with the selection criteria. Further, the method includes a step of sending traffic of the user to one of the plural, dynamic VPN cloud servers based upon the matching step. The application is also directed to a system for securing web traffic on a network including a policy controller and router.

Methods and systems for controlling traffic to vpn servers

A substrate used for III-V-nitride growth and a manufacturing method thereof, the manufacturing method comprising the following steps: 1) providing a growth substrate, and forming on the surface of the growth substrate a buffer layer used for subsequent growth of a luminescent epitaxial structure; 2) forming a semiconductor dielectric layer on the surface of the buffer layer; 3) by means of a photolithography process, etching a plurality of semiconductor dielectric protrusions arranged at intervals on the semiconductor dielectric layer, and exposing the buffer layer between the semiconductor dielectric protrusions. This method ensures the crystal quality of the grown luminescent epitaxial structure and also raises the luminescent efficiency of a light-emitting diode. The process is simple, advantageous for reducing cost of manufacture, and suitable for use in industrial production.

Substrate used for group iii-v nitride growth and method for preparation thereof

The invention discloses a fluorescent powder-free white light pyramid array nitride-based semiconductor LED and a preparation method thereof and belongs to the technical field of semiconductors. The method includes three steps, namely laser punching size selecting, pyramid growing, and device manufacturing. According to the invention, the regulating and controlling of area ratio between the surface of the pyramid surface and the pyramid surface is used to regulate and control light intensity ratio between a low wavelength and a long wavelength; the shortening of punching spacing is intended for realizing the connection of two pyramids so as to further regulate and control corresponding wavelength of the pyramid top. The multi-wavelength structure provides the possibility of enabling the white light LED to have high color rendering index. According to the invention, the method has simple technology, and can regulate and control wavelengths simply by changing punching sizes and punching spacing. In addition, according to the invention, the method adopts a split pyramid structure and can be intended for realizing bendable flexible white light LED.

Fluorescent powder-free white light pyramid array nitride-based semiconductor LED and preparation method thereof

PROBLEM TO BE SOLVED: To provide a separation method capable of separating a carrier substrate from a resin layer such that damage, etc. are not caused to the resin layer that is to be final products and also the resin layer after having been separated is easy to handle.SOLUTION: A separation method according to the present invention includes: a protection step S2 in which a surface of a resin layer is covered with a protective film; a suction holding step S8 in which the resin layer having been covered with the protective film is sucked to a suction stage having a flat suction surface; and a separation step S10 in which, after a support roller movable from one end of a carrier substrate to the other end supports the rear surface of the carrier substrate on a side of the one end, the one end of the carrier substrate is lowered while the support roller is moved toward the other end, and thereby the carrier substrate is separated from the resin layer while the carrier substrate is bent at a portion where the carrier substrate is supported by the support roller.SELECTED DRAWING: Figure 2

Method and device for separating workpiece comprising carrier substrate and resin layer

A light-emitting element comprises a semiconductor layer, a light-emitting laminated structure and a plurality of inverted pyramid structures formed in one surface of the light-emitting laminated structure. The transverse cross-sectional areas of the inverted pyramid structures decrease extending perpendicularly relative to the light-emitting laminated structure. The light-emitting element is rendered easier to produce due to the inverted pyramid structures.

Semiconductor template substrate, light-emitting element using a semiconductor template substrate, and a production method therefor

A method of forming a nitride film by hydride vapor phase epitaxy, the method including: sequentially disposing at least one group III metal source including impurities and a substrate in an external reaction chamber and an internal reaction chamber sequentially located in the direction of gas supply and heating each of the external reaction chamber and the internal reaction chamber at a growth temperature; forming a metal chloride by supplying hydrogen chloride gas and carrier gas into the external reaction chamber to react with the group III metal source and transferring the metal chloride to the substrate; and forming the nitride film doped with the impurities on the substrate by reacting the transferred metal chloride with nitrogen source gas supplied to the internal reaction chamber.

Method of forming nitride film and nitride structure

A light-emitting device includes a semiconductor layer, a light-emitting stack structure formed on a first surface of the semiconductor layer, and a plurality of inverted pyramid structures formed on a second surface of the semiconductor layer opposite to the first surface. Each of the inverted pyramid structures has a sectional area increasing as each of the inverted pyramid structures is more extended in a vertical direction from the second surface.

Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor

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Semiconductor template substrate, light-emitting element using a semiconductor template substrate, and a production method therefor

Method of forming nitride film and nitride structure

Semiconductor template substrate, light-emitting device using a semiconductor template substrate, and manufacturing method therefor