5 Papers
7 Citations
Min Lu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Dark current. The author has an hindex of 5, co-authored 5 publications.
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Papers
GaN-based PIN alpha particle detectors
TL;DR: In this article, the electrical properties of GaN-based PIN alpha particle detectors have been investigated, such as current voltage and capacitance voltage, and the reverse current of all detectors is in nA range applied at 30-V, which is suitable for detector operation.
31
Gallium Nitride for Nuclear Batteries
Min Lu,Guo Wang,Chang Sheng Yao +2 more
TL;DR: In this paper, the GaN PIN diodes have leakage current of 18 pA at -10V due to consummate fabrication processes, and the open circuit voltage of the GB is estimated about 0.14 V and the short circuit current density is 89.2nAcm-2.
21
GaN‐based p–i–n X‐ray detection
TL;DR: In this paper, the surface of a GaN sample has a large number of hexagonal defects, which will be the flow channel of leakage current, which in turn increased the reverse bias leakage current of detectors.
15
X-ray detectors based on Fe doped GaN photoconductors
TL;DR: In this article, the dark current I(d) and photocurrent I(p) as a function of bias have been investigated and a large Ip/Id ratio of 180 at 200 V has been obtained in spite of optical quenching.
7
Gallium Nitride Schottky betavoltaic nuclear batteries
TL;DR: In this paper, a GaN Schottky betavoltaic nuclear batteries (GNBB) was demonstrated for the first time, where GaN films are grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD), and then GaN-Schottky diodes are fabricated by normal micro-fabrication process.