A new record conversion efficiency of 24.7% was attained at the research level by using a heterojunction with intrinsic thin-layer structure of practical size (101.8 cm2, total area) at a 98-μm thickness. This is a world height record for any crystalline silicon-based solar cell of practical size (100 cm2 and above). Since we announced our former record of 23.7%, we have continued to reduce recombination losses at the hetero interface between a-Si and c-Si along with cutting down resistive losses by improving the silver paste with lower resistivity and optimization of the thicknesses in a-Si layers. Using a new technology that enables the formation of a-Si layer of even higher quality on the c-Si substrate, while limiting damage to the surface of the substrate, the Voc has been improved from 0.745 to 0.750 V. We also succeeded in improving the fill factor from 0.809 to 0.832.

24.7% Record Efficiency HIT Solar Cell on Thin Silicon Wafer

With a global market share of about 90%, crystalline silicon is by far the most important photovoltaic technology today. This article reviews the dynamic field of crystalline silicon photovoltaics from a device-engineering perspective. First, it discusses key factors responsible for the success of the classic dopant-diffused silicon homojunction solar cell. Next it analyzes two archetypal high-efficiency device architectures – the interdigitated back-contact silicon cell and the silicon heterojunction cell – both of which have demonstrated power conversion efficiencies greater than 25%. Last, it gives an up-to-date summary of promising recent pathways for further efficiency improvements and cost reduction employing novel carrier-selective passivating contact schemes, as well as tandem multi-junction architectures, in particular those that combine silicon absorbers with organic–inorganic perovskite materials.

/pdf/high-efficiency-crystalline-silicon-solar-cells-status-and-47y1w8zg6w.pdf

High-efficiency crystalline silicon solar cells: status and perspectives

The current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified. Quantum efficiency spectra of cells in which select layers are omitted reveal that the collection efficiency of carriers generated in the ITO and doped a-Si:H layers is zero, and only 30% of light absorbed in the intrinsic a-Si:H layer contributes to the short-circuit current. Using the optical constants of each layer acquired from ellipsometry as inputs in a model, the quantum efficiency and short-wavelength current loss of a heterojunction cell with arbitrary a-Si:H layer thicknesses and arbitrary ITO doping can be correctly predicted. A 4 cm2 solar cell in which these parameters have been optimized exhibits a short-circuit current density of 38.1 mA/cm2 and an efficiency of 20.8%.

/pdf/current-losses-at-the-front-of-silicon-heterojunction-solar-9rf44rhs66.pdf

Current Losses at the Front of Silicon Heterojunction Solar Cells

The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. In this work, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed. The development of passivating contacts holds great potential for enhancing the power conversion efficiency of silicon photovoltaics. Here, De Wolf et al. review recent advances in material design and device architecture, and discuss technical challenges to industrial fabrication.

/pdf/passivating-contacts-for-crystalline-silicon-solar-cells-66twad5vaz.pdf

Passivating contacts for crystalline silicon solar cells

A wafer-based monocrystalline silicon photovoltaics road map: Utilizing known technology improvement opportunities for further reductions in manufacturing costs

A new type of a-Si/c-Si heterojunction solar cell, called the HIT (Heterojunction with Intrinsic Thin-layer) solar cell, has been developed based on ACJ (Artificially Constructed Junction) technology. A conversion efficiency of more than 18% has been achieved, which is the highest ever value for solar cells in which the junction was fabricated at a low temperature (<200°C).

https://iopscience.iop.org/article/10.1143/JJAP.31.3518/pdf

Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

We evaluated the conduction mechanisms and temperature dependence of HIT (heterojunction with intrinsic thin layer) structure solar cells while changing the thickness of the undoped amorphous silicon layer. It was confirmed that the diffusion model determined the carrier transport property of this device at the high-forward-bias region (0.4<V<0.8 V), whereas the multistep tunneling model determined the current transport at the low-bias region (0.1<V<0.4 V). The insertion of the high-quality hydrogenated amorphous silicon (a-Si:H) i-layer is very important for suppressing the probabilities of tunneling through the localized states in a-Si:H and surface recombination velocity at the heterointerface. The better temperature dependence of output power of HIT structure solar cells than that of the crystalline silicon (c-Si) homojunction solar cell is caused mainly by the high-open circuit voltage that originates in the effectively suppressed saturation current with HIT structure, and also by the fill factor (F.F.), which is affected by the change in conductivity in the a-Si:H i-layer.

https://iopscience.iop.org/article/10.1143/JJAP.47.814/pdf

Temperature Dependence of Amorphous/Crystalline Silicon Heterojunction Solar Cells

A device-quality p-type microcrystalline silicon (µc-Si)film was prepared using a new solid phase crystallization (SPC) method from the p-type amorphous silicon (a-Si:H) deposited by plasma-CVD. The obtained properties of high conductivity (σd=2×103 (Ωcm)-1) and a high optical transmittance in the range of 2.0 eV~3.0 eV are better as a window material for a-Si solar cells than those of conventional p-type µc-Si:H and a-SiC:H.

High-Quality p-Type µc-Si Films Prepared by the Solid Phase Crystallization Method

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Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

Temperature Dependence of Amorphous/Crystalline Silicon Heterojunction Solar Cells

High-Quality p-Type µc-Si Films Prepared by the Solid Phase Crystallization Method