Mikhail Haurylau
University of Rochester
30 Papers
465 Citations
Mikhail Haurylau is an academic researcher from University of Rochester. The author has contributed to research in topics: Optical interconnect & Silicon. The author has an hindex of 11, co-authored 30 publications. Previous affiliations of Mikhail Haurylau include Belarusian State University of Informatics and Radioelectronics & KLA-Tencor.
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Papers
On-chip optical interconnect roadmap: challenges and critical directions
Mikhail Haurylau,Hui Chen,Jidong Zhang,Guoqing Chen,Nicholas A. Nelson,David H. Albonesi,Eby G. Friedman,Philippe M. Fauchet +7 more
- 17 Oct 2005
TL;DR: The ITRS is used as a reference point to derive the requirements that optical components must meet and the required parameters for optical components are yet unknown.
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Predictions of CMOS compatible on-chip optical interconnect
Guoqing Chen,Hui Chen,Mikhail Haurylau,Nicholas A. Nelson,Philippe M. Fauchet,Eby G. Friedman,David H. Albonesi +6 more
- 02 Apr 2005
TL;DR: The critical dimensions beyond which optical interconnect becomes advantageous over electrical interconnect are shown to be approximately one tenth of the chip edge length at the 22 nm technology node.
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Tunable photonic bandgap structures for optical interconnects
TL;DR: In this article, tuning of the optical properties is controlled by liquid crystals (LCs) that are infiltrated into the silicon matrix, and active tuning is demonstrated both out-of-plane and in-plane.
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On-Chip Copper-Based vs. Optical Interconnects: Delay Uncertainty, Latency, Power, and Bandwidth Density Comparative Predictions
Guoqing Chen,Hui Chen,Mikhail Haurylau,Nicholas A. Nelson,David H. Albonesi,Philippe M. Fauchet,Eby G. Friedman +6 more
- 05 Jun 2006
TL;DR: In this article, the performance of CMOS compatible optical devices are made based on current state-of-the-art optical technologies and compared with electrical and optical interconnects for delay uncertainty, latency, power, and bandwidth density.
Electrical modulation of silicon-based two-dimensional photonic bandgap structures
TL;DR: In this article, an improved electrode configuration is used to avoid electric field screening by the conductive silicon walls and electrical tuning using fields well below 1V∕μm is demonstrated experimentally using both polarized light microscopy and reflectance photonic band gap measurements.
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