Michelle Y. Simmons
University of New South Wales
477 Papers
2.3K Citations
Michelle Y. Simmons is an academic researcher from University of New South Wales. The author has contributed to research in topics: Silicon & Electron. The author has an hindex of 51, co-authored 458 publications. Previous affiliations of Michelle Y. Simmons include Applied Science Private University & Australian Research Council.
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Papers
Charge sensing of a few-donor double quantum dot in silicon
TL;DR: In this paper, the authors demonstrate the charge sensing of a few-donor double quantum dot precision placed with atomic resolution scanning tunnelling microscope lithography and show that a tunnel-coupled single electron transistor (SET) can be used to detect electron transitions on both dots as well as inter-dot transitions.
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Scanning probe spectroscopy: Probing dopants at the atomic level
TL;DR: A more comprehensive understanding of coupled quantum systems could soon be in reach with a capacitance-based scanning probe technique that explores the behaviour and interaction of individual dopant atoms in a semiconductor as mentioned in this paper.
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Single P and As dopants in the Si(001) surface
Marian W. Radny,Phillip V. Smith,Thilo Reusch,Oliver Warschkow,Nigel A. Marks,Hongqing Shi,David R. McKenzie,Steven R. Schofield,Neil J. Curson,Michelle Y. Simmons +9 more
TL;DR: First-principles density functional theory is used to discuss doping of the Si(001) surface by a single substitutional phosphorus or arsenic atom and shows that there are two competing atomic structures for isolated Si-P and Si-As heterodimers, and that the donor electron is delocalized over the surface.
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Temperature limits for ballistic quantization in a GaAs/AlGaAs one-dimensional constriction
J. E. F. Frost,Michelle Y. Simmons,Michael Pepper,A. C. Churchill,David A. Ritchie,G. A. C. Jones +5 more
TL;DR: In this paper, one-dimensional (1D) ballistic constrictions have been made in a two-dimensional electron gas of high carrier concentration and high mobility formed at the interface of a GaAs/AlGaAs heterostructure.
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Effect of temperature and magnetic field on the 0.7 structure in a ballistic one-dimensional wire
Kalarikad Thomas,J. T. Nicholls,Michael Pepper,Michelle Y. Simmons,D. R. Mace,David A. Ritchie +5 more
TL;DR: In this paper, the authors studied the effect of temperature on the evolution of the ballistic one-dimensional wires with increasing in-plane magnetic field and showed that the structure develops into a plateau at e(2/h) if either the inplane magnetic fields is increased or the carrier density is decreased.
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