Atomically thin molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) semiconductor with a multitude of interesting properties and promising device applications spanning all realms of electronics and optoelectronics. While possessing inherent advantages over conventional bulk semiconducting materials (such as Si, Ge and III-Vs) in terms of enabling ultra-short channel and, thus, energy efficient field-effect transistors (FETs), the mechanically flexible and transparent nature of MoS2 makes it even more attractive for use in ubiquitous flexible and transparent electronic systems. However, before the fascinating properties of MoS2 can be effectively harnessed and put to good use in practical and commercial applications, several important technological roadblocks pertaining to its contact, doping and mobility (µ) engineering must be overcome. This paper reviews the important technologically relevant properties of semiconducting 2D TMDCs followed by a discussion of the performance projections of, and the major engineering challenges that confront, 2D MoS2-based devices. Finally, this review provides a comprehensive overview of the various engineering solutions employed, thus far, to address the all-important issues of contact resistance (RC), controllable and area-selective doping, and charge carrier mobility enhancement in these devices. Several key experimental and theoretical results are cited to supplement the discussions and provide further insight.

Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor

The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

The Challenges of Advanced CMOS Process from 2D to 3D

Electronically reprogrammable photonic circuits based on phase-change chalcogenides present an avenue to resolve the von-Neumann bottleneck; however, implementation of such hybrid photonic-electronic processing has not achieved computational success. Here, we achieve this milestone by demonstrating an in-memory photonic-electronic dot-product engine, one that decouples electronic programming of phase-change materials (PCMs) and photonic computation. Specifically, we develop non-volatile electronically reprogrammable PCM memory cells with a record-high 4-bit weight encoding, the lowest energy consumption per unit modulation depth (1.7 nJ/dB) for Erase operation (crystallization), and a high switching contrast (158.5%) using non-resonant silicon-on-insulator waveguide microheater devices. This enables us to perform parallel multiplications for image processing with a superior contrast-to-noise ratio (≥87.36) that leads to an enhanced computing accuracy (standard deviation σ ≤ 0.007). An in-memory hybrid computing system is developed in hardware for convolutional processing for recognizing images from the MNIST database with inferencing accuracies of 86% and 87%. 

/pdf/in-memory-photonic-dot-product-engine-with-electrically-35pde6nf.pdf

In-memory photonic dot-product engine with electrically programmable weight banks

Amorphization of silicon by ion irradiation in dense plasma focus

This paper investigates how the thermal diffusion of boron in silicon is influenced by a high energy fluorine implant with a dose in the range 5?1014 to 2.3?1015cm-2. SIMS profiles of boron marker layers are presented for different fluorine doses and compared with fluorine profiles to establish the conditions under which thermal boron diffusion is suppressed. The SIMS profiles show significantly reduced boron thermal diffusion above a critical F+ dose of 0.9-1.4?1015cm-2. Fitting of the measured boron profiles gives suppressions of the boron thermal diffusion coefficient by factors of 1.9 and 3.7 for F+ implantation doses of 1.4?1015 and 2.3?1015cm-2 respectively. The suppression of boron thermal diffusion above the critical fluorine dose correlates with the appearance of a shallow fluorine peak on the SIMS profile in the vicinity of the boron marker layer. This shallow fluorine peak is present in samples with and without boron marker layers, and hence it is not due to a chemical interaction between the boron and the fluorine. Analysis of the SIMS profiles and cross-section TEM images suggests that it is due to the trapping of fluorine at vacancy-fluorine clusters, and that the suppression of the boron thermal diffusion is due to the effect of the clusters in suppressing the interstitial concentration in the vicinity of the boron profile.

/pdf/effect-of-fluorine-implantation-dose-on-boron-thermal-yxy5yglmd1.pdf

Effect of fluorine implantation dose on boron thermal diffusion in silicon

Ion implantation of advanced silicon devices: Past, present and future

Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Damage accumulation profiles induced by ion implantation into single-crystalline silicon layers and preamorphized silicon layers were investigated by the photoacoustic displacement (PAD) method. Boron ions were implanted at 10 keV with 1 × 10 1 5 ions/cm 2 and 3 X 10 1 5 ions/cm 2 into single-crystalline silicon and preamorphized silicon. Preamorphization was achieved by fluorine ion implantation prior to boron ion implantation. These implanted layers were annealed at 950°C for 30 s by rapid thermal annealing. Damage profiles measured by PAD were compared to measured and calculated dopant and damage profiles. Effects of ion dose, annealing temperature, and combination of fluorine and boron implants were studied. Analysis of secondary ion mass spectroscopy profiles of fluorine combined with boron yielded values of 5.93 eV for F-B binding energy in a segregated region.

Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers

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Papers

Ion implantation of advanced silicon devices: Past, present and future

Diffusion of ion-implanted boron impurities into pre-amorphized silicon

Boron Damage Profiles in Crystalline and Fluorine Preamorphized Silicon Layers