We present the development of a polyimide-based two-dimensional tactile sensing array realized using a novel inverted fabrication technique. Thermal silicon oxide or Pyrex® substrates are treated such that their surfaces are OH group terminated, allowing good adhesion between such substrates and a spun-on polyimide film during processing through what are suspected to be hydrogen bonds that can be selectively broken when release is desired. The release of the continuous polyimide film is rapidly accomplished by breaking these bonds. This process results in robust, low-cost and continuous polymer-film devices. The developed sensor skin contains an array of membrane-based tactile sensors (taxels). Micromachined thin-film metal strain gauges are positioned on the edges of polyimide membranes. The change in resistance from each strain gauge resulting from normal forces applied to tactile bumps on the top of the membranes is used to image force distribution. Response of an individual taxel is characterized. The effective gauge factor of the taxels is found to be approximately 1.3. Sensor array output is experimentally obtained. The demonstrated devices are robust enough for direct contact with humans, everyday objects and contaminants without undue care.

https://iopscience.iop.org/article/10.1088/0960-1317/13/3/302/pdf

Development of polyimide flexible tactile sensor skin

A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length by making efficient use of polyimide or polymer as an inter-metal dielectric thus enabling the integration of very small integrated circuits within a larger circuit environment at a minimum cost in electrical circuit performance.

Top layers of metal for high performance IC's

A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.

Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method

A semiconductor device includes a substrate and a number of diffusion regions defined within the substrate. The diffusion regions are separated from each other by a non-active region of the substrate. The semiconductor device includes a number of linear gate electrode tracks defined to extend over the substrate in a single common direction. Each linear gate electrode track is defined by one or more linear gate electrode segments. Each linear gate electrode track that extends over both a diffusion region and a non-active region of the substrate is defined to minimize a separation distance between ends of adjacent linear gate electrode segments within the linear gate electrode track, while ensuring adequate electrical isolation between the adjacent linear gate electrode segments.

Dynamic array architecture

A method is disclosed for defining a dynamic array section to be manufactured on a semiconductor chip. The method includes defining a peripheral boundary of the dynamic array section. The method also includes defining a manufacturing assurance halo outside the boundary of the dynamic array section. The method further includes controlling chip layout features within the manufacturing assurance halo to ensure that manufacturing of conductive features inside the boundary of the dynamic array section is not adversely affected by chip layout features within the manufacturing assurance halo.

Methods for Defining Dynamic Array Section with Manufacturing Assurance Halo and Apparatus Implementing the Same

An opening in an insulator on a substrate is self-aligned to a reflective region on the substrate. The opening is formed by shining blanket radiation on photoresist on the insulator and developing to open the resist and insulator. The resist region that is above the reflective region absorbs both incident and reflected radiation, a larger total dose of radiation than is absorbed by resist above non-reflective regions. The incident dose is adjusted to provide a below threshold dose everywhere except to those regions of resist that are above highly reflective regions.

Self-aligned pattern over a reflective layer

A pattern in a surface is defined by providing on the surface a hard mask material; depositing an anti-reflective coating on the hard mask material; applying a photoresist layer on the anti-reflective coating; patterning the photoresist layer, anti-reflective layer and hard mask material; and removing the remaining portions of the photoresist layer and anti-reflective layer; and then patterning the substrate using the hard mask as the mask. Also provided is a structure for defining a pattern in a surface which comprises a surface having a hard mask material thereon; an anti-reflective coating located on the hard mask material; and a photoresist located on the anti-reflective coating. Also provided is an etchant composition for removing the hard mask material which comprises an aqueous composition of HF and chlorine.

Process for defining a pattern using an anti-reflective coating and structure therefor

This paper discusses thick polyimide film processing for a three-dimensional (3-D) semiconductor chip-stacking application. The formation of a complex, multilevel via structure is demonstrated. The issues that arise in forming these vias relate to apply, develop, profile modification, and integration. Apply issues include "outgassing" defects, edge-bead effects, as well as the planarity and leveling of both resist and polyimide over deep-via structures. Develop issues pertain to the implementation of a thick resist process that increases the structural integrity of the resist and controls its breakage, and to a vacuum bake before applying resist, which reduces solvent absorption into the resist. Profile modification issues include rounding via edges while minimizing bulk polyimide loss and maintaining image-size control. Developer attack of the metal pads during wet processing is discussed and a solution is proposed. Finally, additional process-integration issues relating to polyimide-to-metal adhesion and composite stress levels of the multilayer thick films are presented.

Processing thick multilevel polyimide films for 3-D stacked memory

Advanced immersion lithography utilizes higher numerical aperture (NA) stepper lenses resulting in higher angles of light illumination through photomasks. Transmission in conventional pellicles (830 nm thickness) is generally maximized at 0 degree illumination and decreases significantly at the higher angles. Most pellicle suppliers have developed thinner pellicle membranes (~280 nm) which allow considerably improved transmission of light at angles up to 20 degrees. In addition, aluminum frames have been shortened, potentially allowing inspection closer to the inside of the frame and reduced mask flatness distortion upon pellicle mount. Suppliers have also developed advanced adhesives which reduce outgassing even beyond the low levels obtained with current 45 nm pellicles. In this paper, advanced immersion pellicles from several suppliers are evaluated and compared with conventional 45 nm pellicles for the following quality parameters: physical durability, foreign material, ease of demounting and glue removal, chemical outgassing, mask flatness distortion and susceptibility to radiation damage. Improvements in mask inspection and pellicle optical transmission at higher incident angles are also evaluated and are discussed. Keywords : Mask flatness, pellicle, adhesive, frame

Evaluation of 32nm advanced immersion lithography pellicles

Previous work has shown that photomask blank flatness as well as photomask patterning and pelliclization all play an
important role in finished photomask flatness. Additional studies have shown that pellicle mounting techniques,
pellicle adhesives, frame flatness and shape and pellicle mounting tools play a role as well. It has become clear that
frame flexibility, coupled with frame mounting surface flatness and shape are the principal factors influencing the
pellicle effect on the mask distortion. Pellicle suppliers have begun to evaluate various polymers as potential
replacements for the standard aluminum frame in current use. The elasticity of the frame adhesive has also been adjusted
to evaluate its effect on the pellicle influence on mask flatness.
This paper describes some joint evaluations between IBM, Toppan and ShinEtsu, performed to determine the effect of
pellicle frame composition,, mount surface flatness, adhesive elasticity and adhesive surface flatness on the distortion of
photolithography masks. It demonstrates that polymer pellicle frames with more flexible adhesive improve finished
mask flatness approximately the same amount as reducing the total frame standoff height of aluminum frames with
conventional adhesive.

Effect of pellicle frame and adhesive material on final photomask flatness

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