A Novel Steganography Scheme Combining Coverless Information Hiding and Steganography

Chaff is composed of small and thin pieces of glass fibres plated with aluminium or silver and is dispersed in the air like a cloud from air fighters or warships. The length of a chaff fibre is generally much smaller than the radar resolution and its orientation is random in chaff clouds. Therefore, chaff clouds can be viewed as anisotropic needle-like particles. For such kind of target, according to the polarimetric decomposition theorem, identifying the dominant physical scattering mechanism is the polarimetric scattering parameter, which is a roll-invariant parameter. As a result, this parameter is introduced to investigate the scattering characteristics of chaff clouds here. Theoretical analysis shows that this parameter of chaff clouds with three typical orientation distributions varies between 45 ∘ and 49 ∘ . Moreover, when the azimuth angles of chaff clouds meet the uniform distribution, the correlation of chaff clouds between the co- and cross-polarised channels vanishes. To this end, the polarisation scattering characteristics of chaff clouds mentioned above are validated by numerical simulation, and a study is also carried out to compare the chaff clouds with other targets, which confirms the feasibility and real-time of chaff jamming recognition by support vector machine classification method.

https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/iet-rsn.2017.0121

Jamming recognition method based on the polarisation scattering characteristics of chaff clouds

Radar Equations for Modern Radar D. K. Barton Artech House, 16 Sussex Street, London, SW1V 4RW. UK. 2013. 428pp. + diskette. £119. (20% discount available to RAeS members via www.artechhouse.com using RAES2014 promotion code). ISBN 978-1-608-07521-8.

Multiple false target images deception is an effective strategy to protect vital military targets from detection and recognition by inverse synthetic aperture radar (ISAR). Previous research about it focuses mainly on the interrupted-sampling and sub-Nyquist sampling repeater jamming based on digital radio frequency memory (DRFM). The digital image synthesis (DIS) technique or scatter-wave modulation is used to simulate electromagnetic scattering of the real target. However, it is difficult to realize due to the high reconnaissance accuracy requirement and a heavy computational burden. Moreover, the protected target remains in the same location and the false targets’ amplitude envelope based on periodic modulation is relatively fixed, which is not conducive to deception. In this paper, an ISAR image modulation method based on coding phase-switched screen (PSS) is proposed against ISAR. The method uses the target bait made of PSS or attaches the PSS to the protected target surface to impose phase modulation onto the reflected signal. As a result, multiple false target images with verisimilar properties are formed around the protected target position when the reflected signal is received and processed by the victim ISAR. Besides, the protected target is concealed and the flexible amplitude control of false targets is achieved. The simulation results are performed to verify the effectiveness of the proposed method.

An Inverse Synthetic Aperture Radar Image Modulation Method Based on Coding Phase-Switched Screen

The simulation of silicon-based light-emitting and photodetectors nanodevices using computer algebra became a challenge. These devices couple the hyperbolic equations of electromagnetic radiation, the parabolic equations of heat conduction, the elliptic equations describing electric potential, and the eigenvalue equations of quantum mechanics—with the nonlinear drift–diffusion equations of the semiconductor physics. These complex equations must be solved by using generally mixed Dirichlet–Neumann boundary conditions in three-dimensional geometries. Comsol Multiphysics modeling software is employed integrated with MATLAB–SIMULINK and Zemax. The physical equations are discretized on a mesh using the Galerkin finite element method (FEM) and to a lesser extent the method of finite volumes. The equations can be implemented in a variety of forms such as directly as a partial differential equation, or as a variational integral, the so-called weak form. Boundary conditions may also be imposed directly or using variational constraint and reaction forces. Both choices have implication for convergence and physicality of the solution. The mesh is assembled from triangular or quadrilateral elements in two-dimensions, and hexahedral or prismatic elements in three dimensions, using a variety of algorithms. Solution is achieved using direct or iterative linear solvers and nonlinear solvers. The former are based on conjugate gradients, the latter generally on Newton–Raphson iterations. The general framework of FEM discretization, meshing and solver algorithms will be presented together with techniques for dealing with challenges such as multiple time scales, shocks and nonconvergence; these include load ramping, segregated iterations, and adaptive meshing.

Computer Algebra Challenges in Nanotechnology: Accurate Modeling of Nanoscale Electro-optic Devices Using Finite Elements Method

With increasing missile processing power, we expect that more elaborate signal processing will be conducted on received target echoes in order to discriminate a real target from a false target. In order to reliably evaluate the effectiveness of chaff recognition algorithms, a model that simulates the Doppler spectrum and the Swerling distribution of a chaff cloud is required.We present a simple assumptions based model that can supply the main spectral characteristics of naval chaff.

Signal modeling of chaff in naval environment simulation

A new type of silicon MOSFET transistor, coupling both electronic and optical properties, is developed in order to overcome the indirect silicon bandgap constraint, and to serve as a future light emitting device in NIR [0.8–2μm] range, as part of a new building block in integrated circuits allowing ultra-high speed processors. Such QW structure enables discrete energy levels for light emission. Model and simulations are presented.

Modeling and simulations of MOSQWell transistor future building block for optical communication

In the race to realize ultrahigh-speed processors, silicon photonics research is part of the efforts. Overcoming the silicon indirect bandgap with special geometry, we developed a concept of a metal–oxide–semiconductor field-effect transistor, based on a silicon quantum well structure that enables control of light emission. This quantum well consists of a recessed ultrathin silicon layer, obtained by a gate-recessed channel and limited between two oxide layers. The device’s coupled optical and electrical properties have been simulated for channel thicknesses, varying from 2 to 9 nm. The results show that this device can emit near infrared radiation in the 1 to <inline-formula<
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/pdf/electrical-control-simulation-of-near-infrared-emission-in-4da7bi4aub.pdf

Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices

In the efforts to address the need for developing ultra-fast computers based on combined electronic and optical signal processing using silicon-based nanoscale devices, new types of transistors have been developed. Ultra-Thin Body and Nano-Scale Body (NSB) Silicon-On-Insulator Metal–Oxide-Semiconductor Field-Effect-Transistor devices, sharing a similar W/L but with a channel thickness of, respectively, 46 nm and down to 1.6 nm, have been fabricated using a selective Gate-Recessed Channel process on the same silicon wafer, and electrically tested at room (300 K) and low (77 K and 4.7 K) temperatures. In addition to the observed drain current values, which were found to be different by three orders of magnitude, quantum steps have been identified in the NSB transfer curves when measured at low temperatures. Since the NSB device's channel is part of a quantum well structure, the steps can point to discrete levels of energy. Such an approach can lead the way to some opportunities toward inter-subband emitting devices. Location of discrete steps is evidence of indirect-to-direct transition in ultra-thin silicon.

Probing of quantum energy levels in nanoscale body SOI-MOSFET: Experimental and simulation results

In recent years, traditional complementary metal–oxide–semiconductor (CMOS) scaling techniques have begun to reach the technological limits of available materials. A revolution in block-to-block communication is necessary to meet the ever-growing demand for microprocessor computational power. On-chip optical communication has been designated as a promising solution to circumvent the CMOS scaling bottlenecks: second-order phenomenon, which causes significant interconnect delays, and the nonscalability of the thermal voltage, which becomes significant in submicron CMOS technology. The metal oxide semiconductor quantum well transistor, a silicon-on-insulator metal–oxide–semiconductor field-effect transistor device, with a channel thickness reduced to the single nanometer scale is examined. The nanometric gate oxide, silicon, and buried oxide heterostructure in the channel forms a quantum potential well, creating discrete sub-bands within the silicon layer. Inter-sub-band-transitions within the quantum well may allow for radiative recombination in indirect band gap materials.

Quantum physics applied to modern optical metal oxide semiconductor transistor

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