Janus WSSe monolayer adsorbed with transition-metal atoms (Fe, Co and Ni): excellent performance for gas sensing and CO catalytic oxidation

NO adsorption on the Os, Ir, and Pt embedded tri-s-triazine based graphitic carbon nitride: A DFT study

During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

/pdf/application-of-two-dimensional-materials-towards-cmos-eedi8ghn.pdf

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

The Adsorption Characteristics of MoS2-CuO Heterojunction to Polar Gas Molecules (CO, NO and NO2): A First-principle Studya

In the quest to create effective sensors that operate at room temperature, consume less power and maintain their stability over time for detecting toxic gases in the environment, molybdenum disulfide (MoS2) and MoS2-based hybrids have emerged as potent materials. In this context, the current work describes the fabrication of Au-MoS2 hybrid gas sensor fabricated on gold interdigitated electrodes (GIEs) for sensing harmful CO and NH3 gases at room temperature. The GIEs-based Au-MoS2 hybrid sensors are fabricated by decorating MoS2 nanoflowers (MNF) with varying size of Au nanoparticles using an inert gas evaporation technique. It is observed that by varying the size of Au nanoparticles, the crystallinity gets modified, as confirmed by x-ray diffraction and Micro-Raman spectroscopy (μRS). The gas sensing measurements revealed that the best sensing response is found from the Au-MoS2 hybrid (with an average particle size of 10 nm). This particular hybrid shows a 79% response to CO exposure and a 69% response to NH3 exposure. The measurements are about 3.5 and 5 times higher than the bare MoS2 when exposed to CO and NH3 at room temperature, respectively. This enhancement in sensing response is attributed to the modified interfacial interaction between the Au nanoparticles and MNF gets improved, which leads to the formation of a Schottky barrier, as confirmed using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy analysis. This enables the development of efficient gas sensors that respond quickly to changes in the gas around them.

Interdigitated electrodes-based Au-MoS2 hybrid gas sensor for sensing toxic CO and NH3 gases at room temperature

The NO gas adsorption properties of the monolayer, bilayer and trilayer MoS2 has been studied based on the first-principles calculation. The interaction between NO and MoS2 layers is weak physical adsorption, which is evidenced by the large distance (>3 Å), small adsorption energies (<0.9 eV) and deformation electron density. Moreover, the effect of the NO adsorption on the charge transfer and the electronic properties are also discussed. For all the NO adsorption cases, 0.04 e charge transfer exists by Mulliken/Hirshfeld analysis and and the charge density difference between NO molecular and MoS2 layers. The NO adsorption can obviously induces new impurity states at about 0.5 eV in the band gap that can lead to the change of the transport properties of the MoS2 layers and then it could detect the NO gas. We also performed semi-quantitatively theoretical analysis from the carrier concentration n and carrier mobility μ to obtain the effect of the NO adsorption on electrical conductivity. Our results provide a theoretical basis for the application of MoS2 layers as gas sensors for important NO polluting gases in air.

https://iopscience.iop.org/article/10.1088/2053-1591/abdb50/pdf

NO gas adsorption properties of MoS2 from monolayer to trilayer: a first-principles study

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NO gas adsorption properties of MoS2 from monolayer to trilayer: a first-principles study