6 Papers
12 Citations
Miao He is an academic researcher from South China Normal University. The author has contributed to research in topics: Superlattice & Electron mobility. The author has an hindex of 2, co-authored 6 publications.
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Papers
Improved Photoluminescence in InGaN/GaN Strained Quantum Wells
Li-Zhen Ding,Li-Zhen Ding,Hong Chen,Miao He,Yang Jiang,Taiping Lu,Zhen Deng,Fangsheng Chen,Fan Yang,Qi Yang,Yu-Li Zhang +10 more
TL;DR: In this article, the influence of strain accumulation on optical properties is investigated for InGaN/GaN-based blue light-emitting diodes grown by metal organic vapor-phase epitaxy.
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A study of 2DEG properties in AlGaN/GaN heterostructure using GaN/AlN superlattice as barrier layers grown by MOCVD
Fangsheng Chen,Fangsheng Chen,Hong Chen,Zhen Deng,Taiping Lu,Yutao Fang,Yang Jiang,Ziguang Ma,Miao He +8 more
TL;DR: In this article, the influence of the period thickness on the electrical properties of two-dimensional electron gas (2DEG) has been investigated, and it is found that the sheet carrier concentration increases as the increase in period thickness at a certain equivalent Al composition, and the electron mobility is strongly dependent on the AlN thickness in a period.
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Influence of Si doping on the structural and optical properties of InGaN epilayers
Ping-Yuan Lu,Ping-Yuan Lu,Ziguang Ma,Shi-Chen Su,Li Zhang,Hong Chen,Haiqiang Jia,Yang Jiang,Wei-Ning Qian,Geng Wang,Taiping Lu,Miao He +11 more
TL;DR: In this paper, the influence of Si doping on the structural and optical properties of the InGaN epilayers is investigated by means of high-resolution X-ray diffraction (HRXRD), photolumimescence (PL), scanning electron microscope (SEM), and atomic force microscopy (AFM).
1
MBE growth of high absorption mid-IR type-II InAs/GaSb superlattices
Geng Wang,Geng Wang,Lu Wang,Hong Chen,Wenxin Wang,Zhenwu Shi,Yulong Chen,Miao He,Ping-Yuan Lu,Wei-Ning Qian +9 more
TL;DR: In this paper, two kinds of short-period type II superlattices (SLs) InAs (6 monolayers (MLs))/GaSb (3 MLs) and InAs(8 MLs)/GAsb (8MLs) which can serve for mid-infrared (MIR) detection have been grown by molecular beam epitaxy (MBE) on p-type GaSb(100) substrates.
Effect of InxGa1−xN “continuously graded" buffer layer on InGaN epilayer grown by metalorganic chemical vapor deposition
Wei-Ning Qian,Wei-Ning Qian,Shi-Chen Su,Hong Chen,Ziguang Ma,Ke-Bao Zhu,Miao He,Ping-Yuan Lu,Geng Wang,Taiping Lu,Chunhua Du,Qiao Wang,Wen-Bo Wu,Wei-Wei Zhang +13 more
TL;DR: In this paper, the effect of an InxGa1-xN continuously graded buffer layer on an InGaN epilayer grown on a GaN template was investigated, and the results showed that the InGa1xN buffer layer is effective to improve the surface morphology, crystalline quality, indium incorporations, and relaxation degrees of the epilayers with different buffer layers.