The capability to detect light over a broad waveband is highly important for practical optoelectronic applications and has been achieved with photodetectors of one-dimensional inorganic nanomaterials such as Si, ZnO, and GaN. However, achieving high speed responsivity over an entire waveband within such a photodetector remains a challenge. Here we demonstrate a broadband photodetector using a single polyaniline nanowire doped with quantum dots that is highly responsive over a broadband from 350 to 700 nm. The high responsivity is due to the high density of trapping states at the enormous interfaces between polyaniline and quantum dots. The interface trapping can effectively reduce the recombination rate and enhance the efficiency for light detection. Furthermore, a tunable spectral range can be achieved by size-based spectral tuning of quantum dots. The use of organic–inorganic hybrid polyaniline nanowires in broadband photodetection may offer novel functionalities in optoelectronic devices and circuits.

An organic–inorganic broadband photodetector based on a single polyaniline nanowire doped with quantum dots

Metal–semiconductor hybrid nanostructures promise improved photoconductive performance due to plasmonic properties of the metal portions and intrinsic electric fields at the metal–semiconductor interface that possibly enhance charge separation. Here we report gold decorated CdSe nanowires as a novel functional material and investigate the influence of gold decoration on the lateral facets on the photoconductive properties. Gold decorated nanowires show typically an at least ten-fold higher photocurrent as compared to their bare counterparts. Interestingly, the photocurrent enhancement is wavelength independent, although the plasmon resonance related to the gold particles appears in the absorption spectra. Our experiments show that light scattering and Schottky fields associated with the metal–semiconductor interface are at the origin of the photocurrent enhancement.

Broad spectral photocurrent enhancement in Au-decorated CdSe nanowires

One-dimensional hybrid optoelectronic materials based photodetectors are highly desirable because low-dimensional nanostructures are fascinating platforms for manipulating electrons and photons at the sub-wavelength scale. In this chapter, we reported two types of ultraviolet–visible photodetectors based on a single hybrid nanowire and a crossed junction formed with two-hybrid nanowires, respectively. For a single nanowire device, the high-performance is attributed to the high density of trapping states at the organic-inorganic interfaces. For crossed junction device, the excellent performance is mainly attributed to the intermediate re-absorption process. These two types of photodetectors would have potential applications and offer novel functionalities in optoelectronic devices and integrated circuits.

Hybrid Optoelectronic Materials for Photodetection Applications

Light formation mechanisms induced by well-aligned sub-20-nm Ag quantum dots produced alongside patterned porous Si walls and bottoms

We investigate the influence of Al back reflectors on the optical absorption spectra of Si nanowire (NW) arrays by using the finite-difference time-domain simulation method. A flat Al layer enhances the absorption in the NW array due to not only the reflection-induced optical path length enlargement but also reflection of light between NWs and localized surface plasmon induced optical field confinement. An Al underlayer with a grating structure allows grating-coupled surface plasmon polariton excitation and raise the optical absorption in the Si NWs. Interplay among all these factors on the optical absorption and expected solar cell performance of the NW arrays is discussed.

Beneficial roles of Al back reflectors in optical absorption of Si nanowire array solar cells

The photocurrent of individual gallium nitride (GaN) nanowires decorated with Au nanoparticles as function of the wavelength of light (405 nm (blue), 532 nm (green), and 632.8 nm (red)) and nanowire diameter (80 to 400 nm) is reported. The photocurrent scales with photon energy but oscillates with nanowire diameter. The oscillations are described in terms of the scattering of surface plasmon polaritons into allowed transverse magnetic electromagnetic modes of the nanowire that have maximum intensities in the undepleted region of the nanowire. These oscillations do not occur below a nanowire diameter of ~200 nm due to the depletion layer formed at the Au-GaN interface, which completely depletes the nanowire, that is, there is an insufficient density of carriers that can be excited into the conduction band. On the basis of estimations of the depletion depth and solutions of the Helmholtz equation, the maxima in the photocurrent for d > 200 nm are assigned to the two lowest azimuthally symmetric transverse magnetic eigenmodes: (m = 0, n = 1) and (m = 0, n = 2), which have maximum electric field intensities within the undepleted region of the GaN nanowire. The outcome of this work could have far reaching implications on the development of nanophotonics.

Observation of surface plasmon polariton pumping of optical eigenmodes of gold-decorated gallium nitride nanowires.

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Observation of surface plasmon polariton pumping of optical eigenmodes of gold-decorated gallium nitride nanowires.