Advances in the design and assembly of flexible thermoelectric device

Thermoelectric materials and their devices can realize the solid-state energy conversion between thermal and electrical energy, therefore serving as a promising alternative to conventional fossil fuels for energy supply. As...

Advances in Ag2Se-based thermoelectrics from materials to applications

Staggered-layer-boosted flexible Bi2Te3 films with high thermoelectric performance

Abstract Exploring new near-room-temperature thermoelectric materials is significant for replacing current high-cost Bi 2 Te 3 . This study highlights the potential of Ag 2 Se for wearable thermoelectric electronics, addressing the trade-off between performance and flexibility. A record-high ZT of 1.27 at 363 K is achieved in Ag 2 Se-based thin films with 3.2 at.% Te doping on Se sites, realized by a new concept of doping-induced orientation engineering. We reveal that Te-doping enhances film uniformity and (00 l )-orientation and in turn carrier mobility by reducing the (00 l ) formation energy, confirmed by solid computational and experimental evidence. The doping simultaneously widens the bandgap, resulting in improved Seebeck coefficients and high power factors, and introduces Te Se point defects to effectively reduce the lattice thermal conductivity. A protective organic-polymer-based composite layer enhances film flexibility, and a rationally designed flexible thermoelectric device achieves an output power density of 1.5 mW cm −2 for wearable power generation under a 20 K temperature difference. 

Flexible power generators by Ag2Se thin films with record-high thermoelectric performance

Advances in bismuth-telluride-based thermoelectric devices: progress and challenges

Harvesting waste heat with flexible Bi_2Te_3 thermoelectric thin film

Inorganic films possess much higher thermoelectric performance than their organic counterparts, but their poor flexibilities limit their practical applications. Here, Sb2Te3/Tex hybrid thin films with high thermoelectric performance and flexibility, fabricated via a novel directional thermal diffusion reaction growth method are reported. The directional thermal diffusion enables rationally tuning the Te content in Sb2Te3, which optimizes the carrier density and leads to a significantly enhanced power factor of >20 µW cm–1 K–2, confirmed by both first‐principles calculations and experiments; while dense boundaries between Te and Sb2Te3 nanophases, contribute to the low thermal conductivity of ≈0.86 W m–1 K–1, both induce a high ZT of ≈1 in (Sb2Te3)(Te)1.5 at 453 K, ranking as the top value among the reported flexible films. Besides, thin films also exhibit extraordinary flexibility. A rationally designed flexible device composed of (Sb2Te3)(Te)1.5 thin films as p‐type legs and Bi2Te3 thin films as n‐type legs shows a high power density of >280 µW cm–2 at a temperature difference of 20 K, indicating a great potential for sustainably charging low‐power electronics.

Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

High relative contact electrical resistance and poor flexibility in inorganic thin‐film thermoelectric devices significantly limit their practical applications. To overcome this challenge, a one‐step thermal diffusion method to fabricate assembly‐free inorganic thin‐film thermoelectric devices is developed, where the in situ grown electrode delivers an excellent leg‐electrode contact, leading to high output power and flexibility in the prepared p‐type Sb2Te3/n‐type Bi2Te3 thin‐film device, which is composed of 8 pairs of p‐n junctions. Such a device shows a very low relative contact electrical resistance of 7.5% and a high power density of 1.42 mW cm–2 under a temperature difference of 60 K. Less than 10% change of the whole electrical resistance before and after bending test indicates the robust bending resistance and stability of the device. This study indicates that the novel assembly‐free one‐step thermal diffusion method can effectively enhance the leg‐electrode contact, the device thermoelectric performance, bending resistance, and stability, which can inspire the development of thin‐film thermoelectric devices.

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Assembly‐Free Fabrication of High‐Performance Flexible Inorganic Thin‐Film Thermoelectric Device Prepared by a Thermal Diffusion

Flexible thermoelectric power generation is a competitive candidate for powering wearable electronic devices and chip-sensor of internet-of-things. Nevertheless, the poor thermoelectric performance of n-type flexible thin film limits its application,...

Significantly (00l)-textured Ag2Se thin films with excellent thermoelectric performance for flexible power applications

Use of a flexible thermoelectric source is a feasible approach to realizing self‐powered wearable electronics and the Internet of Things. Inorganic thin films are promising candidates for fabricating flexible power supply, but obtaining high‐thermoelectric‐performance thin films remains a big challenge. In the present work, a p‐type BixSb2−xTe3 thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility (less than 5% increase in resistance after 1000 cycles of bending at a radius of ∼5 mm). The favorable comprehensive performance of the BixSb2−xTe3 flexible thin film is due to its excellent crystallinity, optimized carrier concentration, and low elastic modulus, which have been verified by experiments and theoretical calculations. Further, a flexible device is fabricated using the prepared p‐type BixSb2−xTe3 and n‐type Ag2Se thin films. Consequently, an outstanding power density of ∼1028 μW cm−2 is achieved at a temperature difference of 25 K. This work extends a novel concept to the fabrication of high‐performance flexible thin films and devices for wearable energy harvesting.

Ultrahigh thermoelectric properties of p‐type BixSb2−xTe3 thin films with exceptional flexibility for wearable energy harvesting

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