Meng Qingyu
Chinese Academy of Sciences
10 Papers
55 Citations
Meng Qingyu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Electrode & Oxide. The author has an hindex of 4, co-authored 10 publications.
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Papers
Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy.
Xiaochuan He,Gangbei Zhu,Jianbing Yang,Hao Chang,Meng Qingyu,Hongwu Zhao,Xin Zhou,Shuai Yue,Zhuan Wang,Jinan Shi,Lin Gu,Donghang Yan,Yuxiang Weng +12 more
TL;DR: O observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy suggests that delocalization free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly.
Hybrid anomalous and planar Nernst effect in permalloy thin films
TL;DR: In this paper, the authors investigated the anomalous and planar Nernst effect in permalloy film and showed that the hybrid effect can be observed in the combined longitudinal and transverse temperature field.
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Impact of interfacial resistance switching on thermoelectric effect of Nb-doped SrTiO3 single crystalline
Peijian Zhang,Yang Meng,Ziyu Liu,Dong Li,Tao Su,Meng Qingyu,Qi Mao,Xin-Yu Pan,Dongmin Chen,Hongwu Zhao +9 more
TL;DR: In this paper, the thermoelectric properties of the bistable resistance states in Nb doped SrTiO3 single crystal have been investigated and the Seebeck coefficients for both low and high resistance states change linearly with temperature.
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Filamentary resistance switching in phthalocyanine thin films observed by electroluminescence
TL;DR: A band-based model has been proposed to describe the electroluminescence (EL) associated electrical switching mechanism in metal phthalocyanine heterojunctions as mentioned in this paper.
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Patent
Method for manufacturing resistance memory device and product and application thereof
Hongwu Zhao,Peijian Zhang,Yang Meng,Dong Li,Meng Qingyu +4 more
- 26 Sep 2012
TL;DR: In this article, the authors proposed a method for manufacturing a resistance memory device, which is capable of emitting light uniformly and being manufactured by the method and an application thereof, which can be used for a photoelectric integral device.
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