Meng-Hung Lin
National Chiao Tung University
5 Papers
29 Citations
Meng-Hung Lin is an academic researcher from National Chiao Tung University. The author has contributed to research in topics: Gallium nitride & Nanoindentation. The author has an hindex of 4, co-authored 5 publications.
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Papers
Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates.
TL;DR: The occurrence of pile-up events indicates that the generation and motion of individual dislocation resulted in ductile and/or brittle properties as a result of the deformed and strain-hardened lattice structure.
Nanoindentation characterization of GaN epilayers on A-plane sapphire substrates
Meng-Hung Lin,Hua-Chiang Wen,Chih-Yung Huang,Yeau-Ren Jeng,Wei-Hung Yau,Wen-Fa Wu,Chang-Pin Chou +6 more
TL;DR: In this article, the GaN epilayers have been investigated in their repetition pressure-induced impairment events from nanoindentation technique and, the relative deformation effect was observed from atomic force microscopy (AFM).
20
Effect of annealing treatment and nanomechanical properties for multilayer Si0.8Ge0.2–Si films
TL;DR: The annealing treatment not only produced misfit dislocations as a significant role in the critical pileup event but also promoted hardness, which is potential to provide the reliability behaviours to design periodical SiGe multilayer structure in further.
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Effect of repetition nanoindentation of GaN epilayers on a‐axis sapphire substrates
TL;DR: In this paper, a crack was found by means of atomic force microscope (AFM) technique at nine loading/reloading cycles even after the indentation beyond the critical depth on the residual indentation impression.
5
Evaluation of the nanoindentation behaviors of SiGe epitaxial layer on Si substrate
Bo Ching He,Chun-Hu Cheng,Hua-Chiang Wen,Yi-Shao Lai,Ping Feng Yang,Meng-Hung Lin,Wen Fa Wu,Chang-Pin Chou +7 more
TL;DR: Hardness and elastic modulus were increased because of a comparatively unstable microstructure after annealing treatment after ultra-high vacuum chemical vapor deposition (UHV/CVD) was employed to synthesize silicon–germanium.