Md Gius Uddin
11 Papers
Md Gius Uddin is an academic researcher. The author has contributed to research in topics: Medicine & Heterojunction. The author has an hindex of 3, co-authored 5 publications.
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Papers
Miniaturized spectrometers with a tunable van der Waals junction
Hoon Hahn Yoon,Henry A. Fernandez,F. O. Nigmatulin,Weiwei Cai,Zongyin Yang,Hanxiao Cui,F. Ahmed,Xiaoqi Cui,Md Gius Uddin,Ethan D. Minot,Harri Lipsanen,Kwanpyo Kim,Pertti Hakonen,Tawfique Hasan,Zhipei Sun +14 more
TL;DR: In this paper , a single van der Waals junction with an electrically tunable transport-mediated spectral response was used to achieve high peak wavelength accuracy (∼0.36 nanometers), high spectral resolution (√ 3 nanometers) and broad operation bandwidth (from ∼405 to 845 nanometers).
Broadband miniaturized spectrometers with a van der Waals tunnel diode
Md Gius Uddin,Susobhan Das,Abde Mayeen Shafi,Lei Wang,Xiaoqi Cui,F. O. Nigmatulin,F. Ahmed,Andreas C. Liapis,Weiwei Cai,Zong-Hua Yang,Harri Lipsanen,Tawfique Hasan,Hoon Hahn Yoon,Zhipei Sun +13 more
TL;DR: Researchers develop a miniaturized spectrometer using a van der Waals tunnel diode, achieving high peak wavelength accuracy (~2nm) and broad operation bandwidth (500-1600nm) in a compact 30×20μm² device, enabling applications in sensing, surveillance, and spectral imaging.
Engineering the Dipole Orientation and Symmetry Breaking with Mixed‐Dimensional Heterostructures
Md Gius Uddin,Susobhan Das,Abde Mayeen Shafi,Vladislav Khayrudinov,Faisal Ahmed,Henry A. Fernandez,Luojun Du,Harri Lipsanen,Zhipei Sun +8 more
TL;DR: In this paper , a morphological manipulation strategy to engineer the dipole orientation and symmetry of 2D layered materials by integrating them with 1D nanowires (NWs) is reported.
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Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field‐Effect Transistors
Abde Mayeen Shafi,Md Gius Uddin,Xiaoqi Cui,Fidaa S.M. Ali,F. Ahmed,Mohamed Radwan,Susobhan Das,Naveed Mehmood,Zhipei Sun,Harri Lipsanen +9 more
TL;DR: Strain engineering enhances carrier mobility in MoTe2 FETs, achieving high mobilities and well-defined metal-insulator transition.
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Direct Epitaxial Growth of InP Nanowires on MoS2 with Strong Nonlinear Optical Response
Abde Mayeen Shafi,Susobhan Das,Vladislav Khayrudinov,Er-Xiong Ding,Md Gius Uddin,F. Ahmed,Zhipei Sun,Harri Lipsanen +7 more
TL;DR: In this article , a vapor-liquid-solid (VLS) method based van der Waals epitaxy of one-dimensional InP nanowires (NWs) directly on two-dimensional MoS2 was reported.
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